Judicious Use of Chalcogens in Multiresonant Thermally Activated Delayed Fluorescent Emitters Leads to OLEDs with Efficiencies Exceeding 36% and Showing Mild Efficiency Roll‐Off

F Futong Liu (State Key Laboratory of Supramolecular Structure and Materials College of Chemistry Jilin University Changchun 130012 P.R. China) Z Zihan Su (College of Pharmaceutical Sciences The Fourth Affiliated Hospital of Soochow University, Suzhou Medical College, Soochow University Suzhou P.R. China) Z Zhuang Cheng (State Key Laboratory of Supramolecular Structure and Materials Department of Chemistry Jilin University Changchun 130012 P.R. China) D Dongyang Chen Y Yangze Xu (State Key Laboratory of Supramolecular Structure and Materials College of Chemistry Jilin University Changchun 130012 P.R. China) Y Yan Yan W Wei Dong (Hangzhou Institute of Medicine Chinese Academy of Sciences) L Liang Wan (State Key Laboratory of Supramolecular Structure and Materials Department of Chemistry Jilin University Changchun 130012 P.R. China) E Eli Zysman‐Colman (Organic Semiconductor Centre, EaStCHEM School of Chemistry University of St Andrews St Andrews UK) P Ping Lu

Abstract

Abstract Strategies that produce OLEDs that simultaneously achieve outstanding electroluminescence efficiency, small efficiency roll‐off, good stability, and high color purity remain in strong demand. Herein, we report how judicious decoration of a benzochalcogenophene onto the BCzBN core leads to an acceleration of reverse intersystem crossing ( k RISC ) without sacrificing either color fidelity and photoluminescence quantum yield ( Φ PL ). Compared with BCzBN , the k RISC of BN‐S and BN‐Se are accelerated to 2.5 × 10 5 and 7.2 × 10 5  s −1 from 1.4 × 10 4  s −1 , each with near‐unity Φ PL s. BN‐S and BN‐Se show narrowband emission at 483 nm (FWHM of 22 nm) and 485 nm (FWHM of 22 nm). The corresponding non‐sensitized OLEDs using BN‐S and BN‐Se exhibited record‐breaking maximum external quantum efficiency (EQE max ) of 43.1 and 36.9%, without any external light extraction techniques. Furthermore, the BN‐Se ‐based OLED showed ultralow efficiency roll‐off, with EQEs remaining at 36.7 and 31.8% at 100 and 1000 cd m −2 , respectively. These emitters do not easily suffer from aggregation‐caused quenching. Even at 12 wt% doping, the EQE max of the OLEDs with BN‐S and BN‐Se were 36.7 and 36.4%, respectively, with mild efficiency roll‐off (EQEs at 1000 cd m −2 of 19.1 and 30.8%, respectively), and nearly unchanged electroluminescence spectra.

Article Details

Volume / Issue Vol. 64, Issue 39
Published September 22, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (10)

F

Futong Liu

State Key Laboratory of Supramolecular Structure and Materials College of Chemistry Jilin University Changchun 130012 P.R. China

Z

Zihan Su

College of Pharmaceutical Sciences The Fourth Affiliated Hospital of Soochow University, Suzhou Medical College, Soochow University Suzhou P.R. China

Z

Zhuang Cheng

State Key Laboratory of Supramolecular Structure and Materials Department of Chemistry Jilin University Changchun 130012 P.R. China

D

Dongyang Chen

Y

Yangze Xu

State Key Laboratory of Supramolecular Structure and Materials College of Chemistry Jilin University Changchun 130012 P.R. China

Y

Yan Yan

W

Wei Dong

Hangzhou Institute of Medicine Chinese Academy of Sciences

L

Liang Wan

State Key Laboratory of Supramolecular Structure and Materials Department of Chemistry Jilin University Changchun 130012 P.R. China

E

Eli Zysman‐Colman

Organic Semiconductor Centre, EaStCHEM School of Chemistry University of St Andrews St Andrews UK

P

Ping Lu