Ionotronics‐Enabled Emerging Halide Perovskite Optoelectronic Devices

R Runsheng Gao (Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China) X Xiaojian Zhu (CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 1 , Ningbo 315201,) X Xiaohan Meng (Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China) X Xuerong Liu S Shuiming Guo (Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China) Q Quanxing Yao (Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China) G Guozhi Chai J Jinshui Miao H Hongwei Tan R Run‐Wei Li (Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo P. R. China)

Abstract

Abstract With the rise of technologies such as artificial vision, smart wearables, and interactive displays, the demand for high‐performance, intelligent, and portable optoelectronic devices has increased significantly. However, conventional silicon‐based optoelectronic devices face limitations in perceiving, processing, and feeding back optoelectrical information, making them unable to meet increasing demanding performance requirements. Conversely, halide perovskites, characterized by excellent optoelectronic properties and high structural tunability, show great potential for advanced next‐generation optoelectronic applications. Recent studies have revealed diverse ionic and electronic behaviors that are crucial for achieving essential physical properties in the design of emerging optoelectronic devices. This review discusses the ionotronic mechanisms of halide perovskites and elucidates how these mechanisms enable high photosensitivity, tunable conductivity, and efficient luminescence. Recent developments in emerging photodetectors, neuromorphic processors, and full‐color displays are discussed for intelligent applications. Additionally, the prospects and challenges of ionotronics‐driven halide perovskite‐based optoelectronic devices are evaluated.

Article Details

Volume / Issue Vol. 1, Issue 1
Published December 16, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

R

Runsheng Gao

Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

X

Xiaojian Zhu

CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 1 , Ningbo 315201,

X

Xiaohan Meng

Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

X

Xuerong Liu

S

Shuiming Guo

Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Q

Quanxing Yao

Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

G

Guozhi Chai

J

Jinshui Miao

H

Hongwei Tan

R

Run‐Wei Li

Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo P. R. China