Investigation of the surface treatment of GaAsSb/Si using current– and capacitance–voltage measurements

Y Yongkang Xia (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,) M Manisha Muduli (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,) S Seunghyun Lee (School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology) N Nathan Gajowski (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210,) S Sophie Mills (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,) N Naga Swetha Nallamothu (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,) S Sk Shafaat Saud Nikor (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,) R Rachel L. Adams (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210,) R Ronald M. Reano (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,) S Steven A. Ringel (Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,) S Sanjay Krishna (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210,) S Shamsul Arafin (Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,)

Abstract

In this study, the effects of surface treatments on the bonded interface between novel III–V absorber material GaAs0.51Sb0.49 latticed-matched to InP and Si are experimentally investigated. Both hydrophobic- and hydrophilic-based surface treatments are performed on target Si substrates prior to transfer-printing-based bonding of GaAsSb. Both current–voltage and capacitance–voltage measurements on these devices suggest that interface oxides, which contribute to robust bonding between GaAsSb and Si, block photoinduced charge transport. Unlike hydrophilic O2 plasma treatment, hydrophobic HF wet etching on Si produces an optimized interface with less defects and facilitates charge transport. After the HF-bonded sample was treated under vacuum right before transfer, the resulting p–i–n photodiodes based on p-GaAsSb/i-GaAsSb/n-Si exhibits device performance comparable to monolithic GaAsSb diodes directly grown on InP substrates. Under 1550 nm illumination, the printed diode outputs a VOC of 230 mV, while the monolithic GaAsSb diode outputs a VOC of 320 mV.

Article Details

Volume / Issue Vol. 139, Issue 17
Published May 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (12)

Y

Yongkang Xia

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,

M

Manisha Muduli

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,

S

Seunghyun Lee

School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology

N

Nathan Gajowski

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210,

S

Sophie Mills

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,

N

Naga Swetha Nallamothu

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,

S

Sk Shafaat Saud Nikor

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,

R

Rachel L. Adams

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210,

R

Ronald M. Reano

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,

S

Steven A. Ringel

Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,

S

Sanjay Krishna

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43210,

S

Shamsul Arafin

Department of Electrical and Computer Engineering, The Ohio State University , Columbus, Ohio 43201,