Investigation of the stress-relief mechanisms in the oxidation of Si(100)

Abstract

Stress-relief mechanisms in the oxidation of Si(100) in two different oxidation conditions are studied by using the equation of the oxide growth that follows the time-dependent power law. By fitting to the equation, the experiments on the oxidation of Si in the dry oxidation condition are analyzed to find that the effective diffusion energy is (eV), and the activation energy for the relaxation of the oxide is (eV) in the temperature range of . When the experiments on the oxidation of Si(100) using ozone gas are analyzed, oxidation is found to proceed via the kick-out diffusion of ionic oxygen with the activation energy of (eV) in the temperature range of .