Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena
H
Hyoseob Kim
S
Suhan Kim
J
Jae-Yeong Cho
S
Sin-Hyung Lee
M
Min-Hwi Kim
Article Details
Journal
Scientific Reports
Volume / Issue
Vol. 15, Issue 1
Published
April 15, 2025
ISSN
2045-2322
Publisher
Nature Portfolio
Authors (5)
H
Hyoseob Kim
S
Suhan Kim
J
Jae-Yeong Cho
S
Sin-Hyung Lee
M
Min-Hwi Kim
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