Intrinsically‐Stretchable and Patternable Quantum Dot Color Conversion Layers for Stretchable Displays in Robotic Skin and Wearable Electronics
Abstract
AbstractStretchable displays are essential components as signal outputs in next‐generation stretchable electronics, particularly for robotic skin and wearable device technologies. Intrinsically‐stretchable and patternable color conversion layers (CCLs) offer practical solutions for developing full‐color stretchable micro‐light‐emitting diode (LED) displays. However, significant challenges remain in creating stretchable and patternable CCLs without backlight leakage under mechanical deformation. Here, a novel material strategy for stretchable and patternable heavy‐metal‐free quantum dot (QD) CCLs, potentially useful for robotic skin and wearable electronics is presented. Through a versatile crosslinking technique, uniform and high‐concentration QD loading in the elastomeric polydimethylsiloxane matrix without loss of optical properties is achieved. These CCLs demonstrate excellent color conversion capabilities with minimal backlight leakage, even under 50% tensile strain. Additionally, fine‐pixel patterning process with resolutions up to 300 pixels per inch is compatible with the QD CCLs, suitable for high‐resolution stretchable display applications. The integration of these CCLs with micro‐LED displays is also demonstrated, showcasing their use in haptic‐responsive robotic skin and wearable healthcare monitoring sensors. This study offers a promising material preparation methodology for stretchable QDs/polymer composites and highlights their potential for advancing flexible and wearable light‐emitting devices.
Article Details
Authors (22)
Kiwook Kim
Dong Ryong Kim
Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Dohyeon Kim
School of Chemical and Biological Engineering Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
Hyeon Hwa Song
Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea
Seungmin Lee
Yonghoon Choi
Kyunghoon Lee
Gwang Heon Lee
Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Jinhee Lee
Department of Molecular, Cell and Developmental Biology, University of California
Hye Hyun Kim
Eonhyoung Ahn
Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea
Jae Hong Jang
Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Yaewon Kim
Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Hyo Cheol Lee
Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea
Yunho Kim
Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Soo Ik Park
Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea
Jisu Yoo
Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Youngsik Lee
School of Chemical and Biological Engineering Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
Jongnam Park
School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Dae‐Hyeong Kim
Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
Moon Kee Choi
Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
Jiwoong Yang