Intrinsically‐Stretchable and Patternable Quantum Dot Color Conversion Layers for Stretchable Displays in Robotic Skin and Wearable Electronics (Adv. Mater. 32/2025)

K Kiwook Kim D Dong Ryong Kim (Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) D Dohyeon Kim (School of Chemical and Biological Engineering Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea) H Hyeon Hwa Song (Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea) S Seungmin Lee Y Yonghoon Choi K Kyunghoon Lee G Gwang Heon Lee (Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) J Jinhee Lee (Department of Molecular, Cell and Developmental Biology, University of California) H Hye Hyun Kim E Eonhyoung Ahn (Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea) J Jae Hong Jang (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) Y Yaewon Kim (Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) H Hyo Cheol Lee (Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea) Y Yunho Kim (Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) S Soo Ik Park (Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea) J Jisu Yoo (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) Y Youngsik Lee (School of Chemical and Biological Engineering Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea) J Jongnam Park (School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) D Dae‐Hyeong Kim (Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea) M Moon Kee Choi (Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) J Jiwoong Yang

Article Details

Volume / Issue Vol. 37, Issue 32
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (22)

K

Kiwook Kim

D

Dong Ryong Kim

Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

D

Dohyeon Kim

School of Chemical and Biological Engineering Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea

H

Hyeon Hwa Song

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea

S

Seungmin Lee

Y

Yonghoon Choi

K

Kyunghoon Lee

G

Gwang Heon Lee

Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

J

Jinhee Lee

Department of Molecular, Cell and Developmental Biology, University of California

H

Hye Hyun Kim

E

Eonhyoung Ahn

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea

J

Jae Hong Jang

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Y

Yaewon Kim

Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

H

Hyo Cheol Lee

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea

Y

Yunho Kim

Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

S

Soo Ik Park

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea

J

Jisu Yoo

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Y

Youngsik Lee

School of Chemical and Biological Engineering Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea

J

Jongnam Park

School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

D

Dae‐Hyeong Kim

Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea

M

Moon Kee Choi

Graduate School of Semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology (FUST) Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

J

Jiwoong Yang