Intrinsically Thermally Robust Nanocrystals for High‐Flux Photonics

X Xiachu Xiao Y Yutao Yang J Jianru Wang Y Yuxiang Xin (School of Chemistry and Chemical Engineering Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica Hubei Engineering Research Center for Biomaterials and Medical Protective Materials Key Laboratory of Material Chemistry for Energy Conversion and Storage Ministry of Education Huazhong University of Science and Technology (HUST) Wuhan P. R. China) Y Yujie Jiang (State Key Laboratory of Synergistic Chem-Bio Synthesis, Shanghai Key Laboratory for Molecular Engineering of Chiral Drugs, School of Chemistry and Chemical Engineering) X Xingyou Wu (Wuhan National Laboratory for Optoelectronics (WNLO) Optics Valley Laboratory School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei P. R. China) K Kun Zhang H Hengyang Xiang (Key Laboratory of New Display Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering) H Haibo Zeng J Jiang Tang (Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information) Z Zhuolei Zhang

Abstract

ABSTRACT High‐brightness photonic platforms driven at high currents self‐heat beyond 400 K; under such conditions, colloidal emitters (II–VI, III–V, I–III–VI 2 , group‐IV semiconductors, and both leaded and lead‐free halide perovskite nanocrystals) typically lose efficiency and drift in color. Extrinsic passivation offers limited thermal gains with trade‐offs such as organic‐matrix degradation or oxide‐shell phonon bottlenecks. Here we establish a lattice‐encoded chemical strategy that imparts intrinsic thermal resilience to colloidal nanocrystals via defect–phonon–exciton coupling in a zero‐dimensional Sb 3+ ‐doped Cs 3 LnCl 6 lattice. A controlled‐ramp synthesis co‐modulates site occupancy and defect chemistry, creating rigid, low‐phonon [BX 6 ] 3− octahedra that localize lattice expansion and suppress multiphonon relaxation. Ångström‐scale engineered deep traps (∼0.6–1.2 eV) recycle thermally activated carriers, enabling trap‐compensated anti‐thermal quenching and stabilizing emission through Ln 3+ 4f cascade coupling. Tunable from deep violet to ultra‐narrow green and yellow, these nanocrystals show enhanced photoluminescence at elevated temperatures (Cs 3 LnCl 6 :Sb 3+ reaches 160% intensity at ∼410 K while retaining >93% photoluminescence quantum yield). High‐power devices retain >90% luminous flux after 50 h at 1.4 A (junction temperature ∼410 K) with <1% chromaticity shift. This work turns thermal robustness from extrinsic protection into intrinsic bonding, providing a molecular design framework for high‐flux photonics.

Article Details

Volume / Issue Vol. 38, Issue 14
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

X

Xiachu Xiao

Y

Yutao Yang

J

Jianru Wang

Y

Yuxiang Xin

School of Chemistry and Chemical Engineering Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica Hubei Engineering Research Center for Biomaterials and Medical Protective Materials Key Laboratory of Material Chemistry for Energy Conversion and Storage Ministry of Education Huazhong University of Science and Technology (HUST) Wuhan P. R. China

Y

Yujie Jiang

State Key Laboratory of Synergistic Chem-Bio Synthesis, Shanghai Key Laboratory for Molecular Engineering of Chiral Drugs, School of Chemistry and Chemical Engineering

X

Xingyou Wu

Wuhan National Laboratory for Optoelectronics (WNLO) Optics Valley Laboratory School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei P. R. China

K

Kun Zhang

H

Hengyang Xiang

Key Laboratory of New Display Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering

H

Haibo Zeng

J

Jiang Tang

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information

Z

Zhuolei Zhang