Intrinsic attraction driving the high temperature performance of additively manufactured aluminum alloys

Y Yueting Wang C Chengzhe Yu K Kefu Gan T Tiechui Yuan R Ruidi Li

Abstract

Abstract Developing additive manufacturing (AM) aluminum alloys with high temperature strength remains a formidable scientific challenge, primarily due to the strengthening precipitates coarsening above 200°C. Conventional heat-resistant alloy design strategies aim to hinder the precipitate coarsening by incorporating low diffusive alloying elements. However, such approaches remain ineffective against thermally driven defect mobilization, especially for vacancy diffusion and dislocation climbing, which are dominant drivers of high temperature weakening. As a result, most AM Al alloys exhibit a rapid decline in strength within this critical temperature range. Through reverse-engineering of intrinsic atom-defect/atom attraction, we employ an intrinsic attraction (IA) strategy to trigger multi-dimensional defect confinement mechanisms. This approach achieves: divacancy clusters anchoring free vacancies; solute atmospheres capturing mobile dislocations and suppressing creep deformation; specific segregation forming nanostructures at precipitate interfaces and interiors to inhibit coarsening. The AM heat-resistant Al alloy demonstrates satisfactory high temperature performance, exhibiting yield strengths of ~305 MPa at 300°C, ~190 MPa at 400°C, coupled with creep resistance at 200-400°C ( $$\dot{\varepsilon }$$ ε °  < 10 -7 /s) and prominent processability for large-size bladed disk. This strategy transcends the conventional empirical paradigm by engineering elemental segregation tendencies at specific sites, provides a universal design approach for the development of aluminum alloys or other high temperature structural materials.

Article Details

Volume / Issue Vol. 17, Issue 1
Published April 07, 2026
ISSN 2041-1723
Publisher Nature Portfolio

Journal Info

Nature Communications

Nature Portfolio

ISSN: 2041-1723 Open Access Life Sciences

Authors (5)

Y

Yueting Wang

C

Chengzhe Yu

K

Kefu Gan

T

Tiechui Yuan

R

Ruidi Li