Interfacial diffusion-driven thermal magnetization switching in Tb/Co multilayers

N Nanyu Wang (College of Electronic Engineering (College of Artificial Intelligence), South China Agricultural University , Guangzhou, Guangdong 510642,) C Caijian Jiang (College of Electronic Engineering, South China Agricultural University , Guangzhou, Guangdong 510642,) X Xinyu Song (School of Chemistry and Chemical Engineering, Shandong University , Jinan 250100,) D Donglin Liu C Chudong Xu (College of Electronic Engineering (College of Artificial Intelligence), South China Agricultural University , Guangzhou, Guangdong 510642,)

Abstract

As an emerging frontier in magnetic materials research, terbium/cobalt (Tb/Co) multilayers exhibit unique magnetic properties. This study systematically investigates interfacial diffusion phenomena and their critical impact on the thermal magnetization switching process in Tb/Co multilayers. The microscopic mechanisms governing the process are analyzed comprehensively through numerical simulations of atomic spin dynamics. Our results demonstrate that interfacial diffusion substantially modifies the material's thermomagnetic characteristics. Specifically, it broadens the energy window required for thermal magnetization reversal, enabling switching processes to occur across wider energy ranges while enhancing operational stability and reliability. Furthermore, by combining systematic data analysis with theoretical derivations, we establish quantitative correlations between diffusion extent and key switching parameters. Importantly, we elucidate the intrinsic physical principle underlying interfacial-diffusion-accelerated thermal magnetization dynamics. These findings provide a theoretical foundation for optimizing material properties and designing high-performance thermally controlled magnetic memory devices, paving the way for significant technological advancements in this field.

Article Details

Volume / Issue Vol. 138, Issue 3
Published July 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

N

Nanyu Wang

College of Electronic Engineering (College of Artificial Intelligence), South China Agricultural University , Guangzhou, Guangdong 510642,

C

Caijian Jiang

College of Electronic Engineering, South China Agricultural University , Guangzhou, Guangdong 510642,

X

Xinyu Song

School of Chemistry and Chemical Engineering, Shandong University , Jinan 250100,

D

Donglin Liu

C

Chudong Xu

College of Electronic Engineering (College of Artificial Intelligence), South China Agricultural University , Guangzhou, Guangdong 510642,