Infrared In‐Sensor Computing Based on Flexible Photothermoelectric Tellurium Nanomesh Arrays

J Jiachi Liao H He Shao Y Yuxuan Zhang (College of Chemistry) Y Yan Yan J Ji Zeng C Changyong Lan B Boxiang Gao D Dong Chen Q Quan Quan (Department of Materials Science and Engineering) P Pengshan Xie Y You Meng (Department of Materials Science and Engineering) J Johnny C. Ho (Department of Materials Science and Engineering)

Abstract

Abstract The inherent limitations of traditional von Neumann architectures hinder the rapid development of internet of things technologies. Beyond conventional, complementary metal‐oxide‐semiconductor technologies, imaging sensors integrated with near‐ or in‐sensor computing architectures emerge as a promising solution. In this study, the multi‐scale van der Waals (vdWs) interactions in 1D tellurium (Te) atomic chains are explored, leading to the deposition of a photothermoelectric (PTE) Te nanomesh on a polymeric polyimide substrate. The self‐welding process enables the lateral vapor growth of a well‐connected Te nanomesh with robust electrical and mechanical properties, including a PTE responsivity of ≈120 V W −1 in the infrared light regime. Leveraging the PTE operation, the thermal‐coupled bi‐directional photoresponse is investigated to demonstrate a proof‐of‐principle in‐sensor convolutional network for edge computing. This work presents a scalable approach for assembling functional vdWs Te nanomesh and highlights its potential applications in PTE image sensing and convolutional processing.

Article Details

Volume / Issue Vol. 37, Issue 15
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

J

Jiachi Liao

H

He Shao

Y

Yuxuan Zhang

College of Chemistry

Y

Yan Yan

J

Ji Zeng

C

Changyong Lan

B

Boxiang Gao

D

Dong Chen

Q

Quan Quan

Department of Materials Science and Engineering

P

Pengshan Xie

Y

You Meng

Department of Materials Science and Engineering

J

Johnny C. Ho

Department of Materials Science and Engineering