Influence of tin concentration on the electronic structure and ferroelectric behavior of barium titanate: Experimental and first-principles insights

V Viktoria Kraft (Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,) S Samuele Spreafico (Interdisciplinary Center of Molecular Materials (ICMM) and Computer Chemistry Center (CCC), Friedrich-Alexander-Universität Erlangen-Nürnberg 2 , Erlangen 91052,) M Maria Rita Cicconi (Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,) M Michel Kuhfuß (Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,) K Ko Mibu (Department of Physical Science and Engineering) K Koji Kimura (Department of Physical Science and Engineering, Nagoya Institute of Technology 1 , Nagoya 466-8555,) K Koichi Hayashi (Department of Physical Science and Engineering, Nagoya Institute of Technology 1 , Nagoya 466-8555,) V Vasilii A. Balanov (Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu 4 , Oulu 90570,) Y Yang Bai N Neamul H. Khansur (Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,) B Bernd Meyer (Computer Chemistry Center (CCC) & Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstraße 25, 91052 Erlangen, Germany) K Kyle G. Webber (Department of Materials Science and Engineering, Institute of Glass and Ceramics, Friedrich-Alexander-Universität Erlangen-Nürnberg 2 , Erlangen,)

Abstract

To meet the growing demand for energy, multimodal energy conversion systems, such as photoferroelectrics, are receiving increased attention. Among these, oxide perovskites like Sn substituted barium titanate exhibit enhanced piezoelectric coefficient and dielectric permittivity at room temperature compared to the parent composition. This study investigates whether these enhancements originate from intrinsic Sn incorporation or extrinsic contributions. Additionally, the impact of Sn on the electronic bandgap is examined, which is critical for multifunctional applications. A combined experimental and first-principles approach is employed to systematically analyze different Sn concentrations (0–12.5 mol. % Sn), focusing on B-site ordering in BaTiO3. The experimental analysis includes dielectric and ferroelectric measurements, diffuse reflectance spectroscopy, and photoconductivity measurements for bandgap estimations. Computational screening reveals that Sn ions repel each other and preferentially adopt second neighbor B-site positions along the Ti–O–Ti bond. While the bandgap shows minimal changes (meV range), spontaneous polarization and polarization hysteresis decrease significantly with increasing Sn content. The experimentally observed increase in piezoelectric response is thus attributed primarily to extrinsic effects on the meso- and macroscales from the domain structure and the coexistence of phases around 11 mol. % Sn, rather than to intrinsic incorporation of Sn into the perovskite lattice.

Article Details

Volume / Issue Vol. 138, Issue 9
Published September 07, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (12)

V

Viktoria Kraft

Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,

S

Samuele Spreafico

Interdisciplinary Center of Molecular Materials (ICMM) and Computer Chemistry Center (CCC), Friedrich-Alexander-Universität Erlangen-Nürnberg 2 , Erlangen 91052,

M

Maria Rita Cicconi

Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,

M

Michel Kuhfuß

Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,

K

Ko Mibu

Department of Physical Science and Engineering

K

Koji Kimura

Department of Physical Science and Engineering, Nagoya Institute of Technology 1 , Nagoya 466-8555,

K

Koichi Hayashi

Department of Physical Science and Engineering, Nagoya Institute of Technology 1 , Nagoya 466-8555,

V

Vasilii A. Balanov

Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu 4 , Oulu 90570,

Y

Yang Bai

N

Neamul H. Khansur

Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,

B

Bernd Meyer

Computer Chemistry Center (CCC) & Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstraße 25, 91052 Erlangen, Germany

K

Kyle G. Webber

Department of Materials Science and Engineering, Institute of Glass and Ceramics, Friedrich-Alexander-Universität Erlangen-Nürnberg 2 , Erlangen,