Influence of tin concentration on the electronic structure and ferroelectric behavior of barium titanate: Experimental and first-principles insights
Abstract
To meet the growing demand for energy, multimodal energy conversion systems, such as photoferroelectrics, are receiving increased attention. Among these, oxide perovskites like Sn substituted barium titanate exhibit enhanced piezoelectric coefficient and dielectric permittivity at room temperature compared to the parent composition. This study investigates whether these enhancements originate from intrinsic Sn incorporation or extrinsic contributions. Additionally, the impact of Sn on the electronic bandgap is examined, which is critical for multifunctional applications. A combined experimental and first-principles approach is employed to systematically analyze different Sn concentrations (0–12.5 mol. % Sn), focusing on B-site ordering in BaTiO3. The experimental analysis includes dielectric and ferroelectric measurements, diffuse reflectance spectroscopy, and photoconductivity measurements for bandgap estimations. Computational screening reveals that Sn ions repel each other and preferentially adopt second neighbor B-site positions along the Ti–O–Ti bond. While the bandgap shows minimal changes (meV range), spontaneous polarization and polarization hysteresis decrease significantly with increasing Sn content. The experimentally observed increase in piezoelectric response is thus attributed primarily to extrinsic effects on the meso- and macroscales from the domain structure and the coexistence of phases around 11 mol. % Sn, rather than to intrinsic incorporation of Sn into the perovskite lattice.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (12)
Viktoria Kraft
Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,
Samuele Spreafico
Interdisciplinary Center of Molecular Materials (ICMM) and Computer Chemistry Center (CCC), Friedrich-Alexander-Universität Erlangen-Nürnberg 2 , Erlangen 91052,
Maria Rita Cicconi
Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,
Michel Kuhfuß
Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,
Ko Mibu
Department of Physical Science and Engineering
Koji Kimura
Department of Physical Science and Engineering, Nagoya Institute of Technology 1 , Nagoya 466-8555,
Koichi Hayashi
Department of Physical Science and Engineering, Nagoya Institute of Technology 1 , Nagoya 466-8555,
Vasilii A. Balanov
Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu 4 , Oulu 90570,
Yang Bai
Neamul H. Khansur
Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg 1 , Erlangen 91058,
Bernd Meyer
Computer Chemistry Center (CCC) & Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstraße 25, 91052 Erlangen, Germany
Kyle G. Webber
Department of Materials Science and Engineering, Institute of Glass and Ceramics, Friedrich-Alexander-Universität Erlangen-Nürnberg 2 , Erlangen,