Influence of implantation and annealing temperatures on electrical property of low-dose implanted/annealed SiC

Abstract

Terahertz time-domain ellipsometry was used to examine the electrical properties of low-dose implanted/annealed silicon carbide (SiC) subjected to different implantation and annealing temperatures. P- and Al-implantations were performed at a dose of 2 × 1013 cm−2 and at implantation temperatures of 30 and 500 °C, and the samples were subsequently annealed at 1200 and 1600 °C. For both the P- and Al-implanted/annealed SiC, resistivity was halved when the implantation temperature was increased from 30 to 500 °C. The decrease in resistivity is attributed to the suppression of implantation-induced damage at 500 °C. The resistivity of the P-implanted/annealed SiC decreased drastically as the annealing temperature was increased from 1200 to 1600 °C owing to electrical activation. However, for the Al-implanted/annealed SiC, the resistivity showed little change with increasing annealing temperature. The high ionization energy of Al is considered to have inhibited the reduction in resistivity. These results demonstrate the importance of controlling the implantation and annealing temperatures, even for low-dose implantation.