Influence of electrical properties on thermal boundary conductance at metal/semiconductor interface
Abstract
Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat transfer across metal/doped semiconductor junctions is investigated. Specifically, thermal boundary conductance at the interfaces between p- and n-doped silicon and titanium is measured by employing frequency-domain photothermal radiometry under varying external conditions. The influence of the doping level of the semiconductor, the barrier height, and the space charge area is analyzed. In particular, a 40% increase in the interface thermal conductance with the application of a current at n-doped silicon/titanium interfaces is reported. The enhancement of the thermal boundary conductance is explained by the shrinking of the surface charga area induced by the electric current. This study opens the way to modulating interfacial heat transfer at metal/semiconductor interfaces through fine tuning of electrical effects.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (13)
Q. Pompidou
ITheMM, Université de Reims Champagne-Ardennes URCA 1 , Moulin de la Housse, BP 1039, 51100 Reims,
C. Acosta
INSA de Lyon, CETHIL, UMR5008 2 , 69621 Villeurbanne,
M. Brouillard
Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN - Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille 3 ,
N. Bercu
Light nanomaterials, nanotechnologies laboratory, CNRS UMR 7076, University of Reims Champagne-Ardenne 2 , Reims,
L. Giraudet
L2n, UMR CNRS 7076, Université de Technologie de Troyes 4 , 12 rue Marie Curie, 10004 Troyes,
R. Sheikh
Department of Mechanical Engineering and Materials Science, University of Pittsburgh 5 , Pittsburgh, Pennsylvania 15213,
C. Adessi
Institut Lumière Matière, UMR5306, Université Claude Bernard Lyon 1-CNRS, Université de Lyon 6 , Villeurbanne 69622,
S. Mérabia
Institut Lumière Matière, UMR5306, Université Claude Bernard Lyon 1-CNRS, Université de Lyon 6 , Villeurbanne 69622,
S. Gomès
INSA de Lyon, CETHIL, UMR5008 2 , 69621 Villeurbanne,
P.-O. Chapuis
INSA de Lyon, CETHIL, UMR5008 2 , 69621 Villeurbanne,
J.-F. Robillard
Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN - Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille 3 ,
M. Chirtoc
ITheMM Laboratory, Université de Reims Champagne-Ardennes URCA 7 , Moulin de la Housse, BP 1039, 51100 Reims,
N. Horny
ITheMM Laboratory, Université de Reims Champagne-Ardennes URCA 7 , Moulin de la Housse, BP 1039, 51100 Reims,