Influence of defect-state on the carrier dynamics in MAPbI3 polycrystalline films
Abstract
In this paper, a transient absorption microscope with submicron resolution is used to detect the internal and grain boundary regions of the prepared polycrystalline thin film grains, and the obtained transient absorption spectra are subjected to singular value decomposition and global fitting. The contributions of hot carriers, cooled carriers, and defect-trapped carriers to the transient absorption signals and the dynamic evolution of the carriers among themselves are elucidated. By comparing the carrier dynamics taking place at the boundary and internal regions, we find that the benign shallow defect state in the grain boundary region has a positive effect on accelerating the cooling of hot carriers, while the deep energy level defects induce excited state absorption signals. This study provides a basis for further understanding the effect of grain boundary defects on the performance of polycrystal perovskite devices.
Article Details
Journal Info
The Journal of Chemical Physics
American Institute of Physics
Authors (7)
Ya’nan Shen
Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University , Xi’an 710049,
Lihe Yan
Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University , Xi’an 710049,
Yifan Wang
Xiangbing Li
Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University 2 , Tianshui 741000,
Yuxiang Zhao
Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University 2 , Tianshui 741000,
Jinhai Si
Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University , Xi’an 710049,
Xun Hou
Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University , Xi’an 710049,