In Situ, Treatment with Guanidinium Chloride Ligand Enables Efficient Blue Quantum Dot Light‐Emitting Diodes with 23.5% External Quantum Efficiency

Y Yanfang Ren (National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Key Lab for Special Functional Materials of Ministry of Education School of Nanoscience and Materials Engineering Henan University Kaifeng 475004 China) C Chenguang Li Y Yan Fang (Hefei National Research Center for Physical Sciences at the Microscale, State Key Laboratory of Precision and Intelligent Chemistry) S Shan Pang (National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Key Lab for Special Functional Materials of Ministry of Education School of Nanoscience and Materials Engineering Henan University Kaifeng 475004 China) X Xiaohong Jiang M Meng Li Z Zuliang Du (National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Key Laboratory for Special Functional Materials of Ministry of Education School of Nanoscience and Materials Engineering Henan University Kaifeng 475004 China)

Abstract

Abstract The poor efficiency and stability of blue Quantum Dot Light‐Emitting diodes (QLED) hinders the practical applications of QLEDs full‐color displays. Excessive electron injection, insufficient hole injection, and abundant defects on the surface of quantum dots (QD) are the main issues limiting the performance of blue devices. Herein, an in situ treatment with bipolar small molecule polydentate ligand–guanidine chloride (GACl) is proposed to simultaneously suppress excessive electron injection, patch surface defects of QDs and enhance hole injection. GACl‐treated blue QLEDs exhibited a remarkable increase in maximal external quantum Efficiency (EQE) from 16.3% to a record 23.5%, accompanied by maximal luminance (36810 cd m −2 ), excellent maximal current efficiency (17.5 cd A −1 ), and enhanced device stability. Combining C–V and J–V characteristics, a concise physical model of hole injection is also established: Below 3 V, hole injection is controlled by the interfacial barrier, primarily through tunneling and thermionic injection; Above 3 V, the interfacial barrier is eliminated, and hole injection efficiency is governed by transport within the QD layer. This study showed a clear physical model for understanding the hole injection mechanism in QLEDs, offering valuable design strategies for improving the performance of blue‐QLEDs.

Article Details

Volume / Issue Vol. 37, Issue 9
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (7)

Y

Yanfang Ren

National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Key Lab for Special Functional Materials of Ministry of Education School of Nanoscience and Materials Engineering Henan University Kaifeng 475004 China

C

Chenguang Li

Y

Yan Fang

Hefei National Research Center for Physical Sciences at the Microscale, State Key Laboratory of Precision and Intelligent Chemistry

S

Shan Pang

National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Key Lab for Special Functional Materials of Ministry of Education School of Nanoscience and Materials Engineering Henan University Kaifeng 475004 China

X

Xiaohong Jiang

M

Meng Li

Z

Zuliang Du

National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Key Laboratory for Special Functional Materials of Ministry of Education School of Nanoscience and Materials Engineering Henan University Kaifeng 475004 China