Implementation of restricted Boltzmann machine using ferroelectric-based stochastic neurons and deterministic synapses

H Haoyue Deng J Jing Lu Z Zhen Fan (Key Laboratory of Quality and Safety Control for Subtropical Fruit and Vegetable, Ministry of Agriculture and Rural Affairs, Horticultural Sciences Department, College of Horticulture Science, Zhejiang A&F University) N Nan Zhang Z Zheyi An (Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,) W Wenjie Li M Meixia Li R Ruiqiang Tao G Guo Tian (Research Institute of Frontier Science) M Minghui Qin (Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,) M Min Zeng (Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, Xi’an Key Laboratory of Functional Organic Porous Materials, School of Chemistry and Chemical Engineering) G Guofu Zhou (National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China) X Xingsen Gao J Jun-Ming Liu (National Engineering Laboratory of Eco-Friendly Polymeric Materials (Sichuan), State Key Laboratory of Advanced Polymer Materials, College of Chemistry, Sichuan University, 29 Wangjiang Rd, Chengdu 610064, P. R. China)

Abstract

Restricted Boltzmann machine (RBM) is a typical stochastic neural network with wide applications in image generation and recognition. Hardware implementation of RBMs using emerging devices (e.g., memristors) is promising for high energy efficiency, but it remains challenging because the devices with distinctly different switching characteristics are required to implement the stochastic neurons and deterministic synapses of the RBM, respectively. Here, an all-ferroelectric RBM, which consists of neurons based on nanoscale ferroelectric field-effect transistors (FeFETs) exhibiting probabilistic switching behavior and synapses based on microscale ferroelectric tunnel junctions (FTJs) showing deterministic switching behavior, is demonstrated by simulation. It is shown that the all-ferroelectric RBM is capable of effectively capturing and processing essential features of input images, achieving high image reconstruction performance. Moreover, the all-ferroelectric RBM's feature extraction capability is further enhanced by optimizing the device parameters of the FeFET and the mapping coefficients in the pulse scheme. Subsequently, the optimized all-ferroelectric RBM is integrated with an FTJ-based artificial neural network for image recognition. This integrated system achieves an accuracy of ∼91.8%, which almost reaches the ∼92% benchmark of a software model, demonstrating the effectiveness of the all-ferroelectric RBM as a feature extractor. This study presents a novel hardware-based approach for developing RBMs by using ferroelectric memristors with distinct switching characteristics.

Article Details

Volume / Issue Vol. 139, Issue 6
Published February 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (14)

H

Haoyue Deng

J

Jing Lu

Z

Zhen Fan

Key Laboratory of Quality and Safety Control for Subtropical Fruit and Vegetable, Ministry of Agriculture and Rural Affairs, Horticultural Sciences Department, College of Horticulture Science, Zhejiang A&F University

N

Nan Zhang

Z

Zheyi An

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,

W

Wenjie Li

M

Meixia Li

R

Ruiqiang Tao

G

Guo Tian

Research Institute of Frontier Science

M

Minghui Qin

Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,

M

Min Zeng

Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, Xi’an Key Laboratory of Functional Organic Porous Materials, School of Chemistry and Chemical Engineering

G

Guofu Zhou

National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

X

Xingsen Gao

J

Jun-Ming Liu

National Engineering Laboratory of Eco-Friendly Polymeric Materials (Sichuan), State Key Laboratory of Advanced Polymer Materials, College of Chemistry, Sichuan University, 29 Wangjiang Rd, Chengdu 610064, P. R. China