Impact of Ga overpressure on the metal modulation epitaxy growth of AlN/AlGaN short period superlattices

Abstract

The formation of AlN/AlGaN short period superlattices (SPSLs) was investigated though the introduction of a constant Ga overpressure during the metal modulated epitaxy (MME) growth of AlN. A combination of x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) analyses found that control over the Al composition in the AlGaN layer was achieved through modulating the Ga beam equivalent pressure (BEP), with a minimum partial pressure of 3 × 10−7 Torr needed for Ga to incorporate at a growth temperature of 825 °C. A minimum Al composition in the AlGaN layer of 72% was achieved for a Ga BEP of 1 × 10−6 Torr using this method. An apparent limit of the AlGaN layer thickness of 3–4 ML indicated that the incorporation of Ga was confined to the consumption region of the MME growth process. Determination of this behavior made clear the requirements of having both XRD and STEM in order to be able to fully characterize the SPSL layer structure. Finally, AFM imaging highlighted that the presence of Ga on the surface behaved as a surfactant, with a minimum RMS roughness of 0.46 nm achieved at the maximum Ga BEP of 1 × 10−6 Torr.