Imaging of a van der Waals spin-orbit torque system using spin ensembles in hBN

X Xi Zhang J Jingcheng Zhou C Chaowei Hu P PeiYu Cai K Kuangyin Deng C Chuangtang Wang N Nishkarsh Agarwal H Hanshang Jin F Faris A. Al-Matouq S Stelo Xu R Roshan S. Trivedi S Senlei Li S Sumedh Rathi H Hanyi Lu Z Zhigang Jiang V Valentin Taufour R Robert Hovden L Liuyan Zhao (Department of Physics, University of Michigan) R Ran Cheng (Beijing National Laboratory for Molecular Science (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Institute of Chemistry, Chinese Academy of Sciences 1 , Beijing 100190,) X Xiaodong Xu E Elton J. G. Santos J Jiun-Haw Chu C Chunhui Rita Du H Hailong Wang (Beijing Key Laboratory for Science and Application of Functional Molecular and Crystalline Materials, Department of Chemistry and Chemical Engineering, School of Chemistry and Biological Engineering)

Abstract

Abstract Recently, optically active spin defects embedded in two-dimensional (2D) van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science. Taking advantage of excellent solid-state integrability, this new class of spin defects can be readily arranged in nanoscale proximity to target materials, showing great promise for realizing in-situ quantum sensing of microscopic spin and charge behaviors in vdW heterostructures. Here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching and electric current distributions in an all-vdW spin-orbit torque (SOT) system. By visualizing variations of nanoscale magnetic stray field profile of room-temperature 2D magnet Fe 3 GaTe 2 under different SOT conditions, we show how the magnetic switching evolves from deterministic to stochastic behavior due to the interplay between spin orientations, anisotropy and Joule heating. Micromagnetic simulations rationalize our results well, revealing the role of field-like SOT in inhibiting thermal fluctuation driven stochastic switching and chaotic multi-domain competition. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights into material design, testing, and performance evaluation of next-generation vdW spintronic devices.

Article Details

Volume / Issue Vol. 17, Issue 1
Published June 10, 2026
ISSN 2041-1723
Publisher Nature Portfolio

Journal Info

Nature Communications

Nature Portfolio

ISSN: 2041-1723 Open Access Life Sciences

Authors (24)

X

Xi Zhang

J

Jingcheng Zhou

C

Chaowei Hu

P

PeiYu Cai

K

Kuangyin Deng

C

Chuangtang Wang

N

Nishkarsh Agarwal

H

Hanshang Jin

F

Faris A. Al-Matouq

S

Stelo Xu

R

Roshan S. Trivedi

S

Senlei Li

S

Sumedh Rathi

H

Hanyi Lu

Z

Zhigang Jiang

V

Valentin Taufour

R

Robert Hovden

L

Liuyan Zhao

Department of Physics, University of Michigan

R

Ran Cheng

Beijing National Laboratory for Molecular Science (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Institute of Chemistry, Chinese Academy of Sciences 1 , Beijing 100190,

X

Xiaodong Xu

E

Elton J. G. Santos

J

Jiun-Haw Chu

C

Chunhui Rita Du

H

Hailong Wang

Beijing Key Laboratory for Science and Application of Functional Molecular and Crystalline Materials, Department of Chemistry and Chemical Engineering, School of Chemistry and Biological Engineering