<i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
Abstract
We combined the synchrotron radiation nanobeam x-ray diffraction technique with the pump–probe method to perform in situ measurements of local strain in a normally ON AlGaN/GaN metal–oxide–semiconductor high electron mobility transistor device under transistor operation. The c-axis strain in the AlGaN barrier layer within the gate region exhibited a clear position dependence, increasing as the gate voltage was increased in the negative direction and as the measurement position moved from the center of the gate electrode toward the drain-side gate edge. Based on the characteristics of the measured c-axis and a-axis strains, we successfully extracted not only the strain component due to the inverse piezoelectric effect but also the thermal expansion strain component, using the constitutive equation for elastic bodies. From the characteristics of the device current measured simultaneously with the strain measurements, it was revealed that the temperature rise inducing the thermal expansion strain was caused by the transient and steady-state drain currents.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (13)
Akihiro Shimada
Graduate School of Engineering Science, The University of Osaka 1 , 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531,
Haruna Shiomi
Graduate School of Engineering Science, The University of Osaka 1 , 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531,
Tetsuya Tohei
Yusuke Hayashi
National Institute for Materials Science (NIMS) , Tsukuba 305-0044,
Masaya Yamaguchi
Junpei Yamamoto
Division of Chemistry, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Takeaki Hamachi
Graduate School of Engineering Science, The University of Osaka 1 , 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531,
Yasuhiko Imai
Japan Synchrotron Radiation Research Institute 2 , Sayo, Hyogo 679-5198,
Kazushi Sumitani
Japan Synchrotron Radiation Research Institute 2 , Sayo, Hyogo 679-5198,
Shigeru Kimura
Japan Synchrotron Radiation Research Institute 2 , Sayo, Hyogo 679-5198,
Shota Kaneki
The Engineering Department, Sumitomo Chemical Company, Ltd 2 ., Chuo-ku 103-6020,
Tamotsu Hashizume
Research Center for Integrated Quantum Electronics, Hokkaido University 3 , Sapporo 060-8628,
Akira Sakai