Hydrogen-terminated single crystal diamond MOSFET with the dielectric of Ga2O3
Abstract
In this work, the first fabrication and investigation of normally-off single crystal hydrogen-sterminated diamond MOSFETs with Ga2O3 dielectric has been successfully carried out. 50-nm-thick Ga2O3 was deposited by electron-beam evaporation technique at room temperature. The maximum drain current was −36 mA/mm, which was 164 times larger than previous work. Based on the transfer characteristic curve, the threshold voltage, on/off ratio and extrinsic transconductance were −0.37 V, 2.3 × 107, and 9.8 mS/mm, respectively. The effective mobility of the MOSFET was calculated to be 264.1 cm2/V ⋅s at VGS = − 1 V. This work may significantly promote the application of H-diamond FETs.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (6)
Yan-Feng Wang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,
Wei Wang
Ming-Hui Zhang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,
Guo-Qing Shao
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,
Xi-Xiang Zhao
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,
Hong-Xing Wang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,