Hydrogen Spillover by Synergy at Ir─O─Ru Interfaces for Ampere‐Level Hydrogen Evolution

H Hong Tang H Hao Yuan X Xingyang Wang (Department of Materials Science and Engineering) F Fei Wang Q Qi Zhao Y Yong‐Wei Zhang (Institute of High Performance Computing (IHPC), Agency for Science Technology and Research (A*STAR) Singapore Republic of Singapore) J John Wang (Department of Materials Science and Engineering)

Abstract

ABSTRACT Industrial‐scale hydrogen production via alkaline water electrolysis requires electrocatalysts capable of sustaining ampere‐level current densities, yet the sluggish Volmer step remains a fundamental kinetic bottleneck. In this study, we report a surface‐microenvironment engineered catalyst in which atomically dispersed iridium atoms are selectively decorated on ruthenium nanoparticles through coordination with surface ─OH groups and defect oxygen sites, forming electronically coupled Ir─O─Ru interfacial ensembles. Density functional theory calculations based on the Ir─O─Ru interfacial model reveal a cooperative hydrogen‐spillover mechanism, in which the positively polarized Ir─O microenvironment promotes H 2 O activation, while the electronically tuned adjacent Ru sites accommodate the spilled‐over H* and drive the H─H coupling, thereby reducing the rate‐determining barrier to 0.19 eV. As a result, the catalyst achieves 1.0 A cm −2 at an overpotential of 103 mV in 1.0 M KOH and shows outstanding durability (3038 h at 1.0 A cm −2 ; 1593 h at 2.0 A cm −2 ). It further maintains stable operation in alkaline seawater (1427 h at 1.0 A cm −2 ) and anion‐exchange‐membrane electrolyzer (910 h at 80°C). These findings demonstrate that single‐atom surface decoration can effectively reconfigure interfacial reaction pathways, providing an efficient strategy for high‐flux alkaline hydrogen evolution.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 03, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (7)

H

Hong Tang

H

Hao Yuan

X

Xingyang Wang

Department of Materials Science and Engineering

F

Fei Wang

Q

Qi Zhao

Y

Yong‐Wei Zhang

Institute of High Performance Computing (IHPC), Agency for Science Technology and Research (A*STAR) Singapore Republic of Singapore

J

John Wang

Department of Materials Science and Engineering