Homogeneity Regulation in Sequential Fabricated Perovskite Film for Industrial‐Scale Deposition of Fully‐Textured Perovskite/Silicon Tandem Cells

Z Zhiliang Liu S Shaofei Yang Y Yang Tian (Shanghai Key Laboratory of Green Chemistry and Chemical Processes, School of Chemistry and Molecular Engineering, East China Normal University, Dongchuan Road 500, Shanghai 200241, China) L Long Jiang G Guanghui Li J Jia Yao (Zhejiang University , , 866 Yuhangtang Rd , ,) M Minglong Liu Z Zhijun Xiong (Suzhou Maxwell Technologies Co., Ltd. Suzhou 215200 P.R. China) C Changxin Tang (Jiangxi Provincial Key Laboratory of Solar Photovoltaics Institute of Photovoltaics School of Physics and Materials Science Nanchang University Nanchang 330031 China) H Hong Zhang A Alex K.‐Y. Jen (Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR) K Kai Yao (School of Materials Science and Engineering)

Abstract

Abstract The combination of industrially crystalline silicon with metal halide perovskites in a tandem configuration has been the focus of intense research efforts. Although a hybrid deposition method has been developed to achieve conformal and scalable growth of perovskite film on textured silicon, this dry/wet approach faces problems of incomplete reaction and phase impurities, posing a challenge for up‐scaling fabrication. Herein, a synergistic strategy is demonstrated for homogeneity regulation of penetration of organic salts by employing solvent engineering in slot‐die coating combined with near‐infrared (NIR) irradiation pre‐heating. The use of mixed solvent contributes to a phase‐pure and homogeneous perovskite film by balancing the rate of solvent evaporation and reactant diffusion. Additionally, the NIR energy heats the large‐area perovskite wet film directly and rapidly in the air, and thus controls the solvent volatilization for uniform phase transformation. As a result, this strategy enables the air‐processed perovskite‐silicon tandem device based on an industrial c‐Si cell to achieve an efficiency of 30.95% (certified 30.6%) for an active area of 1.0 cm 2 and obtain an efficiency of 27.1% for an aperture area of 110 cm 2 . Furthermore, the encapsulated large‐area device retains 89% of the initial output after 1100 h of maximum power point tracking.

Article Details

Volume / Issue Vol. 38, Issue 2
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

Z

Zhiliang Liu

S

Shaofei Yang

Y

Yang Tian

Shanghai Key Laboratory of Green Chemistry and Chemical Processes, School of Chemistry and Molecular Engineering, East China Normal University, Dongchuan Road 500, Shanghai 200241, China

L

Long Jiang

G

Guanghui Li

J

Jia Yao

Zhejiang University , , 866 Yuhangtang Rd , ,

M

Minglong Liu

Z

Zhijun Xiong

Suzhou Maxwell Technologies Co., Ltd. Suzhou 215200 P.R. China

C

Changxin Tang

Jiangxi Provincial Key Laboratory of Solar Photovoltaics Institute of Photovoltaics School of Physics and Materials Science Nanchang University Nanchang 330031 China

H

Hong Zhang

A

Alex K.‐Y. Jen

Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR

K

Kai Yao

School of Materials Science and Engineering