High‐Performance Flexible Near‐Infrared Organic Light‐Emitting Diodes with a Heterogeneous Alloy Semitransparent Electrode
Abstract
ABSTRACT Flexible near‐infrared (NIR) organic light‐emitting diodes (OLEDs) face efficiency challenges due to low photoluminescence quantum yields (PLQYs) in NIR emitters, governed by the energy gap law. Accelerating radiative transitions via the Purcell effect in optical microcavities offers a solution, but conventional flexible semitransparent electrodes struggle to balance microcavity‐enhanced PLQY and light outcoupling efficiency (OCE). We address this with a micro‐structured magnesium‐bismuth (Mg‐Bi) alloy electrode offering 40% broadband transmittance (400–1600 nm) and conductivity (29.3 Ω ◻ −1 ). The alloy's low real permittivity supports less confined surface plasmon polariton and, with a capping layer, yields 60% NIR transmittance in an organic‐to‐air optical configuration. This design achieves 42.3% OCE and elevates the PLQY of a 704 nm NIR emitter to 71.8%, enabling flexible NIR‐OLEDs with a record 24.3% external quantum efficiency. The synergy of optical engineering and conductive microstructures establishes a universal strategy for high‐efficiency flexible NIR optoelectronics.
Article Details
Authors (11)
Mengxin Xu
Meina Han
State Key Laboratory of Integrated Optoelectronics JLU Region College of Electronic Science and Engineering Jilin University Changchun China
Minying Xue
Department of Chemistry State Key Laboratory of Synthetic Chemistry HKU‐CAS Joint Laboratory on New Materials The University of Hong Kong Hong Kong SAR China
Shihao Liu
Yi Li
Gaoqiang Deng
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun 130012,
Letian Zhang
Yuantao Zhang
Gang Cheng
Wenfa Xie
Chi‐Ming Che
State Key Laboratory of Synthetic Chemistry, CAS‐HKU Joint Laboratory On New Materials, Department of Chemistry The University of Hong Kong Pok Fu Lam Hong Kong SAR China