High‐Performance Flexible Near‐Infrared Organic Light‐Emitting Diodes with a Heterogeneous Alloy Semitransparent Electrode

M Mengxin Xu M Meina Han (State Key Laboratory of Integrated Optoelectronics JLU Region College of Electronic Science and Engineering Jilin University Changchun China) M Minying Xue (Department of Chemistry State Key Laboratory of Synthetic Chemistry HKU‐CAS Joint Laboratory on New Materials The University of Hong Kong Hong Kong SAR China) S Shihao Liu Y Yi Li G Gaoqiang Deng (State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun 130012,) L Letian Zhang Y Yuantao Zhang G Gang Cheng W Wenfa Xie C Chi‐Ming Che (State Key Laboratory of Synthetic Chemistry, CAS‐HKU Joint Laboratory On New Materials, Department of Chemistry The University of Hong Kong Pok Fu Lam Hong Kong SAR China)

Abstract

ABSTRACT Flexible near‐infrared (NIR) organic light‐emitting diodes (OLEDs) face efficiency challenges due to low photoluminescence quantum yields (PLQYs) in NIR emitters, governed by the energy gap law. Accelerating radiative transitions via the Purcell effect in optical microcavities offers a solution, but conventional flexible semitransparent electrodes struggle to balance microcavity‐enhanced PLQY and light outcoupling efficiency (OCE). We address this with a micro‐structured magnesium‐bismuth (Mg‐Bi) alloy electrode offering 40% broadband transmittance (400–1600 nm) and conductivity (29.3 Ω ◻ −1 ). The alloy's low real permittivity supports less confined surface plasmon polariton and, with a capping layer, yields 60% NIR transmittance in an organic‐to‐air optical configuration. This design achieves 42.3% OCE and elevates the PLQY of a 704 nm NIR emitter to 71.8%, enabling flexible NIR‐OLEDs with a record 24.3% external quantum efficiency. The synergy of optical engineering and conductive microstructures establishes a universal strategy for high‐efficiency flexible NIR optoelectronics.

Article Details

Volume / Issue Vol. 38, Issue 17
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

M

Mengxin Xu

M

Meina Han

State Key Laboratory of Integrated Optoelectronics JLU Region College of Electronic Science and Engineering Jilin University Changchun China

M

Minying Xue

Department of Chemistry State Key Laboratory of Synthetic Chemistry HKU‐CAS Joint Laboratory on New Materials The University of Hong Kong Hong Kong SAR China

S

Shihao Liu

Y

Yi Li

G

Gaoqiang Deng

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun 130012,

L

Letian Zhang

Y

Yuantao Zhang

G

Gang Cheng

W

Wenfa Xie

C

Chi‐Ming Che

State Key Laboratory of Synthetic Chemistry, CAS‐HKU Joint Laboratory On New Materials, Department of Chemistry The University of Hong Kong Pok Fu Lam Hong Kong SAR China