High‐Contrast Handedness Inversion in Circularly Polarized Organic Ultralong Phosphorescence Enabled by an Antagonistic Chirality‐Offset Helical Superstructure

C Chi‐Bo Feng (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China) J Juan Wei J Jiao Liu W Wen‐Lei Duan (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China) X Xin‐Yi Du (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China) H Hao‐Yi Jiang (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China) F Fei Xu Z Zi‐Ye Wang (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China) Y Yun Ma B Bing‐Xiang Li (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China) Y Yan‐Qing Lu (National Laboratory of Solid State Microstructures & Collaborative Innovation Center of Advanced Microstructures & College of Engineering and Applied Sciences Nanjing University Nanjing China) Q Qiang Zhao

Abstract

ABSTRACT Dynamic and reversible control of circularly polarized ultralong room‐temperature phosphorescence (CP‐OURTP) is highly desirable for time‐gated chiroptical photonics. Yet, the simultaneous realization of handedness inversion and large dissymmetry factors remains challenging because inversion typically occurs near a net‐chirality cancellation point where the photonic bandgap (PBG) collapses. Here, we report a decoupled bilayer CP‐OURTP film that couples a room‐temperature phosphorescent polymer emitter with a photoresponsive chiral helical superstructure (CHS) engineered by an antagonistic chirality‐offset design. By pairing a high‐HTP chiral photoswitch with an oppositely handed static dopant, the net HTP reversibly crosses zero while remaining comparable in magnitude in the two photostationary states, thereby maintaining a robust PBG‐emission overlap on both sides of inversion. Consequently, the film delivers reversibly switchable g lum up to ±1.0 under alternating 365 and 530 nm irradiation, together with a phosphorescence quantum yield of 21.4%, an ultralong lifetime up to 388 ms, and stable operation over 50 switching cycles. The combined CP‐OURTP and selective circular‐polarization reflection enable high‐fidelity rewritable anti‐counterfeiting labels. This CHS‐engineering strategy provides a general route to CP‐OURTP materials with on‐demand chiroptical control for multi‐level information encryption and smart photonic devices.

Article Details

Volume / Issue Vol. 38, Issue 35
Published June 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

C

Chi‐Bo Feng

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China

J

Juan Wei

J

Jiao Liu

W

Wen‐Lei Duan

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China

X

Xin‐Yi Du

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China

H

Hao‐Yi Jiang

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China

F

Fei Xu

Z

Zi‐Ye Wang

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China

Y

Yun Ma

B

Bing‐Xiang Li

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China

Y

Yan‐Qing Lu

National Laboratory of Solid State Microstructures & Collaborative Innovation Center of Advanced Microstructures & College of Engineering and Applied Sciences Nanjing University Nanjing China

Q

Qiang Zhao