High-quantum yields in [6]helicenes: Achieved by boosting radiative decay and suppressing intersystem crossing via BN/BO substitution

S Shiling Wang (College of Physics and Optoelectronics Engineering, Ludong University 1 , 264025 Yantai,) Y Yanli Liu S Shenghui Chen D Dongdong Yang L Li Wang (The Affiliated Cancer Hospital of Zhengzhou University and Henan Cancer Hospital Zhengzhou China) Q Qiushuang Xu (Department of Physics, Yantai University 3 , Yantai 264005,) M Meishan Wang (College of Integrated Circuits, Ludong University 2 , 264025 Yantai,) C Chuanyi Jia (Guizhou Provincial Key Laboratory of Critical Materials and Devices for Solid-State Batteries, Guizhou Provincial Key Laboratory of Computational Nano-Material Science)

Abstract

High-efficiency chiral luminescent materials exploration remains a central challenge in organic optoelectronics. Herein, we report a comprehensive investigation of the spectroscopic properties and fluorescence quantum yields (QY) of three [6]helicenes derivatives, CC[6], BN[6], and BO[6], with a focus on the effect of B–N and B–O bonds substitution. The results demonstrate that BN/BO substitution induces a systematic redshift in emission and CPL spectra, enhances radiative decay rates (kr) by over 20-fold, and significantly suppresses internal conversion (kIC). Although intersystem crossing (kISC) remains the dominant non-radiative pathway, the net effect significantly enhances fluorescence QY, following the trend BO[6] (0.45) > BN[6] (0.34) > CC[6] (0.11). Mechanistic analysis reveals that the superior performance of BO[6] originates from an optimal balance between high kr and relatively weaker ISC. This study not only establishes BN/BO substitution as an effective strategy but also identifies the theoretically designed BO[6] as an optimal candidate, thus providing clear design principles for developing high-performance helicene-based fluorescent materials.

Article Details

Volume / Issue Vol. 164, Issue 14
Published April 14, 2026
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (8)

S

Shiling Wang

College of Physics and Optoelectronics Engineering, Ludong University 1 , 264025 Yantai,

Y

Yanli Liu

S

Shenghui Chen

D

Dongdong Yang

L

Li Wang

The Affiliated Cancer Hospital of Zhengzhou University and Henan Cancer Hospital Zhengzhou China

Q

Qiushuang Xu

Department of Physics, Yantai University 3 , Yantai 264005,

M

Meishan Wang

College of Integrated Circuits, Ludong University 2 , 264025 Yantai,

C

Chuanyi Jia

Guizhou Provincial Key Laboratory of Critical Materials and Devices for Solid-State Batteries, Guizhou Provincial Key Laboratory of Computational Nano-Material Science