High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
Abstract
Using a commercial chemical vapor deposition reactor operated in foundry mode, we rapidly developed high-quality, high-Sn-content GeSn growth recipes within just a few months from the initial trials. A recently discovered growth strategy—spontaneous-relaxation-enhanced (SRE) Sn incorporation—was employed to produce thick, low-defect GeSn layers. We conducted a comprehensive study of GeSn alloys with Sn compositions ranging from 3.1% to 18.2%. All samples exhibited strong room-temperature photoluminescence, confirming excellent material quality. For higher-Sn compositions, optically pumped lasing was achieved at wavelengths beyond 3.3 μm over a temperature range of 77–235 K, with a threshold power density of 338 kW/cm2 at 77 K. The demonstrated combination of foundry-mode operation and SRE-based growth offers a robust, scalable route for rapid GeSn material development, facilitating technology transfer to commercial foundries and accelerating progress toward GeSn-based photonic integration.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (12)
Sudip Acharya
Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Alec Fischer
Lawerence Semiconductor Research Laboratory, Inc. 3 , 2300 West Huntington Drive, Tempe, Arizona 85282,
Nicholas Rosson
Lawerence Semiconductor Research Laboratory, Inc. 3 , 2300 West Huntington Drive, Tempe, Arizona 85282,
Abdulla Said
Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Hryhorii Stanchu
Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,
Quang Minh Thai
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,
Bruce Claflin
Air Force Research Laboratory 3 , 2241 Avionics Circle, Wright-Patterson AFB, Dayton, Ohio 45433,
Gregory Forcherio
Naval Surface Warfare Center, Crane Division 6 , Crane, Indiana 47522,
Greg Sun
Naval Surface Warfare Center 5 , Electro-Optics Tech. Div. 300 Highway 361, Crane, Indiana 47522,
Robin Scott
Lawerence Semiconductor Research Laboratory, Inc. 3 , 2300 West Huntington Drive, Tempe, Arizona 85282,
Wei Du
Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China
Shui-Qing Yu
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,