Journal of the American Chemical Society

High-Performance Electrochemically Gated Single-Molecule Transistor Enabled by Interfacial Engineering

R Rui Wang Y Yingjie Li S Siyu Yan (Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom) Y Yin Zhao (Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering) H He Tian (Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.) H Hongxiang Li (College of Polymer Science and Engineering State Key Laboratory of Polymer Materials Engineering)
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Article Details

Volume / Issue Vol. 148, Issue 4
Published February 04, 2026
Pages 3987-3994
ISSN 0002-7863
Publisher American Chemical Society

Journal Info

Journal of the American Chemical Society

American Chemical Society
ISSN: 0002-7863 Physical Sciences

Authors (6)

R

Rui Wang

Y

Yingjie Li

S

Siyu Yan

Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

Y

Yin Zhao

Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering

H

He Tian

Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.

H

Hongxiang Li

College of Polymer Science and Engineering State Key Laboratory of Polymer Materials Engineering

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