High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs

F Fuxi Liao Z Zhengyong Zhu Z Zihan Li G Guanhua Yang M Menggan Liu K Kaifei Chen W Wendong Lu Z Zijing Wu (State Key Laboratory of Physical Chemistry of Solid Surfaces, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, and College of Chemistry and Chemical Engineering, Xiamen University 2 , Xiamen, Fujian 361005,) X Xuanming Zhang N Naide Mao B Bok-Moon Kang J Jinghong Shi (Department of Chemistry, Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China) X Xie-Shuai Wu M Meichen Jin C Chang Liu J Jing Zhang Y Yong Yu G Gui-Lei Wang C Congyan Lu J Jinshan Yue L Lingfei Wang J Jiawei Wang D Di Geng N Nianduan Lu C Chao Zhao (Shanghai Institute of Measurement and Testing Technology, 1500 Zhang-Heng Road, Shanghai 201203, P.R. China) A Arokia Nathan L Ling Li M Ming Liu