High current ultrawide bandgap AlGaN pin diodes with low on-resistance and UVC emission
Abstract
We report ultrawide-bandgap AlGaN pin diodes with high forward current density and deep-ultraviolet (DUV) electroluminescence signaling efficient carrier injection. The devices incorporate a 100 nm unintentionally doped intrinsic layer between polarization-doped n- and p-type regions, grown by plasma-assisted molecular beam epitaxy on bulk AlN substrates. Electrical characterization reveals current densities up to ∼28 kA/cm2, differential on-resistances below 1 mΩ cm2, ideality factors approaching 1.7, and a cutoff frequency fco = (2πRonCoff)−1 = 30.8 GHz. Capacitance–voltage measurements confirm a reduced junction capacitance relative to a pn diode without the i-layer, while electroluminescence shows ultraviolet emission at 248 nm from the polarization-doped regions. These results establish AlGaN pin diodes as a promising platform for high-speed, high-voltage, and DUV optoelectronic devices, offering a scalable approach to next-generation ultrawide-bandgap electronics and photonics.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (7)
Debaditya Bhattacharya
School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,
Shivali Agrawal
R.F. Smith School of Chemical and Biomolecular Engineering, Cornell University 2 , Ithaca, New York 14853,
Hsin-Wei S. Huang
Department of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,
Madhav Ramesh
School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,
Vladimir Protasenko
School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,
Huili Grace Xing
Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,
Debdeep Jena
School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,