Heterojunction‐Driven Stochasticity: Bi‐Heterojunction Noise‐Enhanced Negative Transconductance Transistor in Image Generation

Abstract

AbstractReliable true‐random number generator (TRNG) hardware demands amplified intrinsic noise and multi‐bit entropy output, which are difficult to achieve in conventional single‐device TRNG implementation. A bi‐heterojunction noise‐enhanced negative transconductance (BHN‐NTC) transistor is presented, incorporating an asymmetric PTCDI‐C13 layer into an NTC transistor. This design enhances electron injection, expanding the NTC region (19 → 27 V) and increasing negative transconductance (−0.036 µS at VGS = −11 V → −0.073 µS at VGS = −15 V) by reducing the electron injection barrier (≈2.13 eV → ≈0.41 eV). The bi‐heterojunction configuration introduces a strong correlation between noises, including trapping/detrapping and generation/recombination processes. This property enables a threefold higher entropy throughput in TRNG, achieving a 3‐bit output per sampling event. The BHN‐NTC‐driven TRNG leverages increased noise‐induced entropy to generate more diverse latent vectors, mitigating mode collapse and enabling the synthesis of high‐quality, realistic images. This significantly enhances StyleGAN2‐based image generation, improving performance metrics such as Frechet inception distance (FID) (18.7 → 8.3), kernel inception distance (KID) (0.024 → 0.009), inception score (IS) (6.5 → 9.2), and multi‐scale structural similarity (MS‐SSIM) (0.43 → 0.21). Consequently, the BHN‐NTC transistor establishes a scalable stochastic noise platform, advancing applications in secure electronics and probabilistic stochastic computing.