Helical Columnar Liquid Crystal Exhibiting Both Polarization Retention and Ferroelectric Switching at Room Temperature

S Seongwon Park (Department of Chemistry, Dankook University, 119, Dandae-ro, Chungnam 448-701, Korea) J Jaeduk Byun (Department of Physics, Dankook University, 119, Dandae-ro, Chungnam 448-701, Korea) S Seong‐hun Lee (Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 South Korea) T Tae Joo Shin B Byoung‐Ki Cho (Department of Chemistry Dankook University 119, Dandae‐ro Chungnam 448‐701 South Korea)

Abstract

Abstract Ferroelectric columnar liquid crystals (FCLCs) with switchable bistable axial polarizations are promising candidates for high‐density ferroelectric random‐access memory (FeRAM). However, FCLCs simultaneously exhibiting uniform polarization arrangement and ferroelectric switching at room temperature (RT) remain elusive. Herein, we report an RT‐operable FCLC based on C 3 ‐symmetric star‐shaped mesogen with polar linkers. Two CLCs, 1 and 2 , were synthesized incorporating 1,2,3‐triazole and amide linkers, respectively. 1 undergoes a ferroelectric‐to‐paraelectric transition accompanied by a structural change from helical to a nonhelical columnar phase. Notably, the ferroelectric switching is operable down to RT, with complete retention of its axial macrodipole after removal of the electric field. In contrast, 2 forms only a nonhelical columnar LC phase, displaying paraelectric behavior. The contrasting self‐assembly and dielectric properties are attributed to the differences in the polar unit size. This study demonstrates that the mesogen extension with a bulky 1,2,3‐triazole linker enables the realization of an FCLC operable at RT, offering significant potential for high‐density FeRAM applications.

Article Details

Volume / Issue Vol. 64, Issue 27
Published July 01, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (5)

S

Seongwon Park

Department of Chemistry, Dankook University, 119, Dandae-ro, Chungnam 448-701, Korea

J

Jaeduk Byun

Department of Physics, Dankook University, 119, Dandae-ro, Chungnam 448-701, Korea

S

Seong‐hun Lee

Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 South Korea

T

Tae Joo Shin

B

Byoung‐Ki Cho

Department of Chemistry Dankook University 119, Dandae‐ro Chungnam 448‐701 South Korea