Harnessing near-field interactions in a perfectly tuned metamaterial selective emitter for high-efficiency InSb thermophotovoltaics

C Chinmoy Biswas (Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology 1 , West Palashi, Dhaka 1205,) H Habiba Akter (Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology 1 , West Palashi, Dhaka 1205,) F Farhana Islam (Mahdy Research Academy 3 , Dhaka 1216,) M Mahdy Rahman Chowdhury (Department of Electrical & Computer Engineering, North South University 4 , Bashundhra, Dhaka 1229,)

Abstract

Thermophotovoltaic (TPV) systems are gaining attention as a solid-state route for efficient heat-to-electricity conversion, particularly where compact, high-performance power sources are required. A central challenge is the design of emitters that closely match the photovoltaic (PV) cell’s bandgap while minimizing spectral losses. Conventional emitters often radiate broadly, wasting energy outside the useful range, and rely on complex nanostructures that are difficult to fabricate and thermally unstable. The emergence of near-field (NF) emitters, enabled by the recent advances in hyperbolic metamaterials, has provided a new pathway by harnessing evanescent waves and surface polariton modes to enhance radiative heat transfer far beyond the blackbody limit while enabling highly selective emission, but still they suffer from having complex structures. Here, we propose a structurally simple NF emitter based on a metal–dielectric–metal metamaterial, with tantalum (Ta) as both resonator and ground layers and calcite (CaCO3), a uniaxial hyperbolic metamaterial, as the dielectric spacer. The design is tuned to emit strongly at 6.6 μm, ideally matched to the 0.173 eV bandgap of InSb PV cells, achieving near-unity peak emissivity with narrow spectral selectivity. Combining NF enhancement with fabrication-friendly architecture and thermal robustness, this emitter overcomes the limitations of broadband and geometrically complex designs, positioning it as a practical and scalable solution for next-generation TPV technologies.

Article Details

Volume / Issue Vol. 139, Issue 9
Published March 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (4)

C

Chinmoy Biswas

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology 1 , West Palashi, Dhaka 1205,

H

Habiba Akter

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology 1 , West Palashi, Dhaka 1205,

F

Farhana Islam

Mahdy Research Academy 3 , Dhaka 1216,

M

Mahdy Rahman Chowdhury

Department of Electrical & Computer Engineering, North South University 4 , Bashundhra, Dhaka 1229,