Halide Perovskite–Chalcohalide Nanocrystal Heterostructures as a Platform for the Synthesis and Investigation of the CsPbCl <sub>3</sub> –CsPbI <sub>3</sub> Epitaxial Interface
Abstract
Abstract Halide exchange in lead‐based halide perovskites has been studied extensively. While mixed Cl/Br or Br/I alloy compositions can be formed with no miscibility gaps, this is precluded for mixed Cl/I compositions, due to the large difference in Cl − and I − ionic radii. Here, perovskite‐chalcohalide CsPbCl 3 –Pb 4 S 3 Cl 2 nanocrystal heterostructures are exploited to study the Cl→I exchange and to isolate new types of intermediate structures. The epitaxial interface between the Pb 4 S 3 Cl 2 chalcohalide and the CsPbCl 3 perovskite significantly influences the intermediate stages of halide exchange in the perovskite domain, leading to coexisting CsPbCl 3 and CsPbI 3 domains, thereby delivering segmented CsPbI 3 –CsPbCl 3 –Pb 4 S 3 Cl 2 , energetically favorable heterostructures, with partial I‐alloying of the CsPbCl 3 domain and at the perovskite–chalcohalide interface. The I:CsPbCl 3 domain between CsPbI 3 and Pb 4 S 3 Cl 2 enables a gradual lattice expansion across the heterostructure. This design accommodates interfacial strain, with a 5.6% mismatch at the CsPbCl 3 –CsPbI 3 interface and a 3.4% mismatch at the perovskite–chalcohalide interface. Full halide exchange leads to CsPbI 3 –Pb 4 S 3 Cl 2 heterostructures. Both in intermediate and fully exchanged heterostructures, the CsPbI 3 domain is emissive. In the intermediate structures, the band alignment between the two perovskite domains is type‐I, with the carriers photogenerated in the CsPbCl 3 domain quickly transferring to the CsPbI 3 domain, where they can recombine radiatively.
Article Details
Authors (13)
Nikolaos Livakas
Nanochemistry Istituto Italiano di Tecnologia Via Morego 30 Genova 16163 Italy
Irina Skvortsova
Department of Chemistry, KU Leuven, Celestijnenlaan 200F, 3001 Heverlee, Belgium
Juliette Zito
Yurii P. Ivanov
Aswin Asaithambi
Nanochemistry Istituto Italiano di Tecnologia Via Morego 30 Genova 16163 Italy
Andrea Toma
Annick De Backer
Electron Microscopy for Materials Science (EMAT) & NANOlight Center of Excellence University of Antwerp Antwerp Belgium
Muhammad Imran
Sandra Van Aert
EMAT and NANOlab Center of Excellence Department of Physics University of Antwerp Antwerp 2020 Belgium
Giorgio Divitini
Ivan Infante
BCMaterials, Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park
Sara Bals
Electron Microscopy for Materials Research and NanoLight Center of Excellence, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
Liberato Manna
Nanochemistry Line, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy