Guanidyl‐Engineered SAMs with Electrostatic–Coordination Synergy for High‐Efficiency Tandem‐Compatible Perovskite Solar Cells

L Laijun Liang (State Key Laboratory of Wide‐Bandgap Semiconductor Devices and Integrated Technology Xidian University Xi'an P. R. China) W Weidong Zhu Z Zihao Wang W Wenming Chai T Tao Zhang H He Xi Z Zhimin Li (School of Chemistry and Materials Sciences, Hangzhou Institute for Advanced Study) H Hang Dong Z Zhanfei Zhang (State Key Laboratory of Space Power Sources Shanghai Institute of Space Power‐Sources Shanghai China) L Lijie Sun C Chunfu Zhang J Jincheng Zhang Y Yue Hao

Abstract

ABSTRACT Wide‐bandgap inverted perovskite solar cells (PSCs) have attracted significant interest owing to their excellent stability feature and unique compatibility with tandem device architectures. However, two major challenges remain: the inhomogeneity of self‐assembled monolayers (SAMs) and the insufficient passivation of buried interface defects. In this study, we introduce polyhexamethylene guanidine hydrochloride (PHMG) as an additive to 4‐(7H‐dibenzo[c,g]carbazole‐7‐yl) phosphonic acid (4PADCB) SAMs, wherein guanidyl groups in PHMG establish electrostatic–coordination synergy with 4PADCB and perovskite species, respectively. The electrostatic interaction suppresses SAM aggregation, reduces interfacial defects, and optimizes energy‐level alignment at the SAM/perovskite interface, while the coordination effect promotes perovskite crystallization, enlarges grains, reduces defect densities, and relaxes interface stress. Consequently, the optimized 1.68 eV‐bandgap PSC delivers a remarkable power conversion efficiency (PCE) of 23.62%, representing the highest value reported to date, with over 95% efficiency retention after 1300 h of thermal aging at 85°C in N 2 . Furthermore, these PSCs are integrated into perovskite/silicon tandem solar cells, achieving a record PCE of 32.49% for a laminated tandem device and the superior values of 32.25% (with an active area of 1 cm 2 ) and 29.34% (with an active area of 20 cm 2 ) for monolithic tandem devices.

Article Details

Volume / Issue Vol. 38, Issue 10
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

L

Laijun Liang

State Key Laboratory of Wide‐Bandgap Semiconductor Devices and Integrated Technology Xidian University Xi'an P. R. China

W

Weidong Zhu

Z

Zihao Wang

W

Wenming Chai

T

Tao Zhang

H

He Xi

Z

Zhimin Li

School of Chemistry and Materials Sciences, Hangzhou Institute for Advanced Study

H

Hang Dong

Z

Zhanfei Zhang

State Key Laboratory of Space Power Sources Shanghai Institute of Space Power‐Sources Shanghai China

L

Lijie Sun

C

Chunfu Zhang

J

Jincheng Zhang

Y

Yue Hao