Group IV binary carbides with double layer honeycomb lattice structure

M Mehrdad Faraji (Davidson School of Chemical Engineering) A Aditya Putatunda (Quantum Materials Theory Group, Italian Institute of Technology (IIT) 3 , Via Morego 30, 16163 Genova,) A Alexander Schleusener (Optoelectronics Group, Italian Institute of Technology (IIT) 1 , Via Morego 30, 16163 Genova,) S Sergey Artyukhin (Quantum Materials Theory Group, Italian Institute of Technology (IIT) 3 , Via Morego 30, 16163 Genova,) R Roman Krahne (Optoelectronics Group, Italian Institute of Technology (IIT) 1 , Via Morego 30, 16163 Genova,)

Abstract

We explore the possibility of SiC, GeC, and SnC to form 2D structures, using evolutionary structure prediction tools and first-principles calculations. For SiC, a double layer honeycomb structure has the lowest energy, while GeC and SnC adopt other structures due to atomic size mismatch. The double layer honeycomb structure of SiC has a moderately large exfoliation energy, and covalent interlayer bonding that results in a stiff structure and high frequency phonons. Electronically, we find the double-layer SiC to be a semiconductor with an indirect bandgap in the visible spectral range. Finally, we explore stacked heterojunctions with graphene to illustrate how double layer SiC could be integrated with existing materials.

Article Details

Volume / Issue Vol. 138, Issue 8
Published August 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

M

Mehrdad Faraji

Davidson School of Chemical Engineering

A

Aditya Putatunda

Quantum Materials Theory Group, Italian Institute of Technology (IIT) 3 , Via Morego 30, 16163 Genova,

A

Alexander Schleusener

Optoelectronics Group, Italian Institute of Technology (IIT) 1 , Via Morego 30, 16163 Genova,

S

Sergey Artyukhin

Quantum Materials Theory Group, Italian Institute of Technology (IIT) 3 , Via Morego 30, 16163 Genova,

R

Roman Krahne

Optoelectronics Group, Italian Institute of Technology (IIT) 1 , Via Morego 30, 16163 Genova,