Giant Circular Dichroism in Proximitized WS <sub>2</sub> Spin‐Valley Transistors for Complementary Optoelectronics and Reconfigurable Logics
Abstract
Abstract The coupling of valley and spin degrees of freedom in 2D materials holds significant promise for advancing novel device applications. In this study, a highly polarized spin‐valley transistor based on the circular dichroic photocurrent in WS 2 is demonstrated. By integrating highly spin‐selective tunneling spin detectors and leveraging the magnetic proximity effect of spin‐polarized substrates, the spin degeneracy in optical transition and spin transport can be broken. A giant photocurrent polarization of 41.90% is realized at room temperature under ultraviolet light irradiation. Interestingly, the sign of the circular dichroism can be reversed by switching the magnetization of substrates and electrodes, showing an opposite resistance state under circularly polarized light. This device has removed the hurdle for developing complementary phototransistors (as they are always in low‐resistance states under light illumination), which are further exploited to construct reconfigurable logic gates. The findings will pave the way for new developments in optical couplers and on‐chip optical computing technologies.
Article Details
Authors (13)
Chengbiao Yang
Department of Physics Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices Ministry of Education Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Min Liu
Chenhao Zhang
Shenyang National Laboratory for Materials Science, Institute of Metal Research
Yongheng Zhou
Feiya Xu
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Chunmiao Zhang
Department of Physics Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices Ministry of Education Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Yiyan Cao
Department of Physics Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices Ministry of Education Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Xuanli Zheng
Yaping Wu
Zhiming Wu
Xiaolong Chen
Beijing National Laboratory for Condensed Matter Physics
Xu Li
Junyong Kang
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University 1 , Xiamen 361005,