Giant and Anisotropic Spin Relaxation Time in van der Waals GeSe With Gate‐Tunability
Abstract
Abstract The 2D materials are promising channel materials for spin transistors due to their natural spatial‐confined carrier transport character. Nonetheless, electrical spin injection and detection in 2D semiconductors used to be challenging. This study reports high‐efficient spin injection and transport in 2D GeSe, which exhibits moderate spin‐orbit coupling (SOC) and extended spin diffusion lengths due to the van der Waals structure. The non‐local magnetoresistance (MR) measurements show a maximum spin polarization of 18.31%, a long spin diffusion length of 255.98 nm, and a giant spin relaxation time of 17.6 ns at room‐temperature. After cooling to 4.3 K, the elevated spin diffusion length further increases to 397.04 nm, with an elevated spin polarization of 25.38%, leading to the successful observation of local MR in a two‐terminal lateral spin valve. Additionally, the spin transport characteristics are also tunable by gate voltages due to the field‐dependent SOC and Rashba spin relaxation. This study highlights GeSe as an air‐stable 2D semiconductor with anisotropic and gate‐tunable spin transport capability. The results will remove the barriers to developing novel spintronic devices based on emerging 2D semiconductors.
Article Details
Authors (15)
Shiming Wu
Department of Physics, Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Qipeng Wu
Department of Physics, Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Yuxiang Zhang
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Republic of Singapore
Mengyu Liu
Chenhao Zhang
Shenyang National Laboratory for Materials Science, Institute of Metal Research
Yongping Wei
Department of Physics, Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Yangjun Gao
College of Chemistry Zhengzhou University Zhengzhou Henan China
Feiya Xu
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Chunmiao Zhang
Department of Physics Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices Ministry of Education Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Yiyan Cao
Department of Physics Engineering Research Center for Micro‐Nano Optoelectronic Materials and Devices Ministry of Education Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Xiamen University Xiamen 361005 P. R. China
Xuanli Zheng
Yaping Wu
Zhiming Wu
Xu Li
Junyong Kang
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University 1 , Xiamen 361005,