Fundamental understanding of the reliability issues of hafnium oxide-based ferroelectric field-effect transistors: A comprehensive review

Abstract

Hafnium oxide (HfO2)-based ferroelectrics have significantly transformed the domain of ferroelectric materials and memory technologies, delivering extraordinary advantages in areas, such as scalability, compatibility with CMOS (complementary metal–oxide-semiconductor) technology, and impressive ferroelectric performance at nanometer dimensions. Although ferroelectricity was first discovered in the mineral Rochelle salt in 1920, its application in mainstream memory technologies was largely restricted until the groundbreaking discovery of ferroelectricity in doped HfO2 in 2007. This pivotal finding initiated a remarkable paradigm shift, establishing HfO2 as a vital material for developing the next generation of non-volatile memory solutions and extending its uses beyond traditional applications. Ferroelectric memories derived from HfO2 exhibit significant potential as storage-class memory systems, synaptic devices designed for neuromorphic computing, and highly integrated high-density systems, effectively bridging the performance divide between volatile and non-volatile memory technologies. This Review commences with an in-depth exploration of the fundamental physics and crystallography of ferroelectric HfO2, subsequently delving into the latest innovations in thin-film fabrication techniques, multifaceted device architectures, and emerging real-world applications. Additionally, key challenges regarding reliability are thoroughly scrutinized, alongside a discussion of strategic measures to mitigate these concerns. The Review also highlights innovative opportunities in areas, such as three-dimensional integration, advancements in artificial intelligence hardware, and the pursuit of energy-efficient computing solutions. The remarkable properties and versatility inherent in HfO2-based ferroelectrics firmly establish their significance as a foundational element for the future landscape of memory technology.