Fukui Function‐Engineered Gel Electrolytes: Thermodynamic/Kinetic‐Synergistic Regulation for Long‐Cycling Zinc Metal Batteries
Abstract
AbstractWhile traditional gel electrolytes address critical issues such as electrolyte leakage and dendrite growth in zinc metal batteries (ZMBs), their intrinsic inability to suppress the competing hydrogen evolution reaction (HER) remains a fundamental limitation. Herein, a Fukui function‐guided molecular engineering approach is proposed to develop a gel electrolyte (HG‐3TP) with higher Gibbs free energy of HER (ΔGHER). The reduced electrophilic Fukui function inhibits Zn electron extraction while participating in Zn2⁺ solvation to decrease free water activity. Simultaneously, attenuated nucleophilic Fukui function creates an inert barrier on Zn anodes, raising H⁺ desorption energy and lowering proton diffusion. These synergistic effects suppress the Volmer/Heyrovsky step, significantly increasing ΔGHER and inhibiting HER. Meanwhile, optimized interfacial energetics facilitate uniform Zn plating/stripping while maintaining cathode compatibility. As a result, Zn batteries with HG‐3TP exhibit excellent long‐term cycling stability, achieving 4,000 h in Zn||Zn symmetric cells and maintaining operation for 710 h at 60 °C, while demonstrating 83.5% capacity retention over 11 000 cycles in Zn||VO2 full cells. This work establishes a thermodynamics‐kinetics orchestrated paradigm through Fukui function‐guided electrolyte design, advancing ultrastable ZMBs for scalable energy storage.
Article Details
Authors (12)
Yiwen Zhang
Hao Zhuo
Peixian Lei
School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China
Dajiang Tang
School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China
Qiang Hu
Xiaoyang Du
School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China
Cai‐Jun Zheng
School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China
Jia‐Lin Yang
State Key Laboratory of Integrated Optoelectronics MOE Key Laboratory for UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin China
Zhen‐Yi Gu
MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China
Jingxin Zhao
Silu Tao
School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China
Xing‐Long Wu
MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China