Formation process and composition-dependent properties in non-centrosymmetric Ta2O5 phase with Zr substitution

S Suzuka Udagawa (Department of Chemistry, Faculty of Science, Gakushuin University , Tokyo 171-8588,) T Takanori Mimura (Department of Chemistry, Faculty of Science, Gakushuin University , Tokyo 171-8588,) T Tetsuhiro Katsumata (Department of Chemistry, School of Science, Tokai University 2 , 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292,) Y Yoshitaka Matsushita T Takashi Mochiku (Research Network and Facility Services Division, National Institute for Materials Science (NIMS) 3 , 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047,) Y Yoshiyuki Inaguma (Department of Chemistry, Faculty of Science, Gakushuin University , Tokyo 171-8588,)

Abstract

(ZrxTa1−x)2O5−x was prepared by a solid-state reaction of ZrO2 and Ta2O5, and the L′-Ta2O5 phase was obtained by cooling the H-Ta2O5 phase. High-temperature x-ray diffraction measurements showed that the starting materials, ZrO2 and low-temperature L-Ta2O5, formed the high-temperature H-Ta2O5 phase when heated above 1360 °C. Upon cooling, this phase sequentially transformed into L″-Ta2O5, the high-temperature L′-Ta2O5 phase, and L′-Ta2O5 phases. As the Zr content, x, decreased, the transition from the H-Ta2O5 phase to the L″-Ta2O5 phase slowed. The temperature dependence of the dielectric constant revealed a maximum value, which is attributed to the phase transition from L′-Ta2O5 to L″-Ta2O5. This transition temperature decreases by approximately 50 °C for every 0.01 increase in the x value. The L′-Ta2O5 phase exhibited negative volumetric thermal expansion (NTE) behavior near the phase transition temperature. As x decreased, the NTE coefficient increased from −1.09 × 10−6/K (77–127 °C) for x = 0.10 to −2.06 × 10−5/K (327–427 °C) for x = 0.05. The substitution of Zr into Ta2O5 stabilized the non-centrosymmetric L′-Ta2O5 phase and controlled the phase transition temperature and thermal expansion behavior.

Article Details

Volume / Issue Vol. 139, Issue 10
Published March 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

S

Suzuka Udagawa

Department of Chemistry, Faculty of Science, Gakushuin University , Tokyo 171-8588,

T

Takanori Mimura

Department of Chemistry, Faculty of Science, Gakushuin University , Tokyo 171-8588,

T

Tetsuhiro Katsumata

Department of Chemistry, School of Science, Tokai University 2 , 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292,

Y

Yoshitaka Matsushita

T

Takashi Mochiku

Research Network and Facility Services Division, National Institute for Materials Science (NIMS) 3 , 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047,

Y

Yoshiyuki Inaguma

Department of Chemistry, Faculty of Science, Gakushuin University , Tokyo 171-8588,