Flexoelectrically Induced Polar Topology in Twisted SrTiO <sub>3</sub> Membranes

I Isabel Tenreiro (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) H Hugo Aramberri V Víctor Rouco (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) G Gabriel Sánchez‐Santolino (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) M Mariona Cabero (ICTS Centro Nacional De Microscopia Electrónica “Luis Brú” Universidad Complutense Madrid Spain) F Fernando Gallego (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) D David Sánchez‐Manzano (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) J José M. González‐Calbet (ICTS Centro Nacional De Microscopia Electrónica “Luis Brú” Universidad Complutense Madrid Spain) F Federico Mompeán M Mar García‐Hernández (Unidad Asociada UCM/CSIC “Laboratorio De Heteroestructuras con Aplicación En spintrónica” Madrid Spain) A Alberto Rivera‐Calzada (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) J Jorge Íñiguez‐González (Smart Materials Unit Luxembourg Institute of Science and Technology (LIST) Esch/Alzette Luxembourg) C Carlos León (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain) J Jacobo Santamaría (GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain)

Abstract

ABSTRACT The recent realization of freestanding membranes of perovskite oxides has enabled their deterministic mechanical assembly into twisted homo bilayers. Twisted oxide interfaces feature a non‐homogeneous pattern of shear strains determined by the atomic registry through the strong ionic‐covalent bonding of this family of compounds. Twisted ferroelectrics open an unprecedented opportunity to tailor topological polar landscapes in a way determined by the flexoelectric coupling of polarization to the large strain gradients developing with the modulation of the moiré coincidence pattern. Yet, flexoelectricity is a universal phenomenon which may render polar landscapes in non‐ferroelectric materials. Here we report a polar topology in twisted membranes of SrTiO 3 (STO), a paraelectric centrosymmetric compound. The polar landscape is generated by the flexoelectrically induced polarization driven by the strain modulation triggered by twisting, as also supported by machine‐learned force fields based on first‐principles calculations. We further show that the strain and polarization patterns in top and bottom layers are correlated in a way which breaks inversion and mirror symmetries as dictated by the emergent chirality imposed by twisting. This finding opens exciting opportunities for the exploration of novel physical effects and functionalities.

Article Details

Volume / Issue Vol. 1, Issue 1
Published March 12, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

I

Isabel Tenreiro

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

H

Hugo Aramberri

V

Víctor Rouco

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

G

Gabriel Sánchez‐Santolino

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

M

Mariona Cabero

ICTS Centro Nacional De Microscopia Electrónica “Luis Brú” Universidad Complutense Madrid Spain

F

Fernando Gallego

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

D

David Sánchez‐Manzano

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

J

José M. González‐Calbet

ICTS Centro Nacional De Microscopia Electrónica “Luis Brú” Universidad Complutense Madrid Spain

F

Federico Mompeán

M

Mar García‐Hernández

Unidad Asociada UCM/CSIC “Laboratorio De Heteroestructuras con Aplicación En spintrónica” Madrid Spain

A

Alberto Rivera‐Calzada

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

J

Jorge Íñiguez‐González

Smart Materials Unit Luxembourg Institute of Science and Technology (LIST) Esch/Alzette Luxembourg

C

Carlos León

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain

J

Jacobo Santamaría

GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain