Field‐Induced Structural Dynamics of Polarization Switching in Hf <sub>x</sub> Zr <sub>1‐x</sub> O <sub>2</sub> Thin Films
Abstract
Abstract The polarization characteristics of Hf x Zr 1‐x O 2 (HZO) are intrinsically linked to its crystal structure. Optimizing its functionality in ferroelectric (FE) and antiferroelectric (AFE) devices requires understanding the structural evolution during polarization switching, which remains insufficiently understood. Here, the switching mechanism in HZO thin films is elucidated by combining in situ microbeam grazing incidence X‐ray diffraction and first‐principles‐based metadynamics simulations, providing unambiguous evidence of phase evolution. Across compositions ( x = 0 to 0.5), switching involves reversible transitions between the nonpolar tetragonal (t) P 4 2 / nmc and polar orthorhombic (o) Pca 2 1 phases. Zr‐rich AFE compounds undergo a complete t‐phase transition during polarization reversal, while in Hf‐rich FE compounds, transient t‐phase formation facilitates the nucleation and growth of o‐phase domains with reversed polarization. This study promotes engineering phase evolution in HZO for advanced devices.
Article Details
Authors (20)
Sangjun Lee
Department of Biomedical Engineering, University of Minnesota
Sunghyun Kim
Seong Yong Park
Donghyun Kim
Su Yong Lee
Pohang Light Source‐II (PLS‐II) Beamline Department Pohang Accelerator Laboratory Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea
Daseul Ham
Pohang Accelerator Laboratory POSTECH Pohang 37673 Republic of Korea
Hyun Hwi Lee
Dongjin Yun
Samsung Advanced Institute of Technology (SAIT) Samsung Electronics Co., Ltd Suwon 16678 Republic of Korea
Seontae Park
Samsung Advanced Institute of Technology (SAIT) Samsung Electronics Co., Ltd Suwon 16678 Republic of Korea
Soohwan Sul
Seungjin Kang
AI Center Samsung Electronics Co., Ltd Suwon 16678 Republic of Korea
Geonu Kim
AI Center Samsung Electronics Co., Ltd Suwon 16678 Republic of Korea
Duk‐Hyun Choe
Samsung Advanced Institute of Technology (SAIT) Samsung Electronics Co., Ltd Suwon 16678 Republic of Korea
Jooho Lee
Beomseok Kim
Semiconductor R&D Center Samsung Electronics Co., Ltd Hwaseong 18448 Republic of Korea
Jinseong Heo
Hyung‐Suk Jung
Semiconductor R&D Center Samsung Electronics Co., Ltd Hwaseong 18448 Republic of Korea
Hanjin Lim
Semiconductor R&D Center Samsung Electronics Co., Ltd Hwaseong 18448 Republic of Korea
Wonsik Choi
Semiconductor R&D Center Samsung Electronics Co., Ltd Hwaseong 18448 Republic of Korea
Jeong‐Gyu Song
Samsung Advanced Institute of Technology (SAIT) Samsung Electronics Co., Ltd Suwon 16678 Republic of Korea