Field‐Free Superconducting Diode Enabled by Geometric Asymmetry and Perpendicular Magnetization

J Jiaxu Li Z Zijian Zhang (School of Physics) S Shiqi Wang Y Yu He (Department of Cardiovascular Surgery, Med-X Institute, the First Affiliated Hospital of Xi’an Jiaotong University, Xi’an, Shaanxi, China.) H Haochang Lyu (Beijing Superstring Academy of Memory Technology Beijing 100176 China) Q Qiusha Wang (School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China) B Bowen Dong D Daoqian Zhu H Hisakazu Matsuki D Dapeng Zhu (Integrated Circuit and Intelligent Instruments Innovation Center Qingdao Research Institute Beihang University Qingdao 266100 China) G Guang Yang W Weisheng Zhao

Abstract

Abstract The superconducting diode effect (SDE), which manifests as directional, dissipationless supercurrents, is pivotal for realizing energy‐efficient superconducting logic and memory technologies. However, achieving high‐efficiency SDE without external magnetic fields remains a fundamental challenge. In this study, a strongly enhanced, field‐free SDE in Pt/Co/Nb heterostructures are proposed, enabled by the interplay of engineered geometric asymmetry and stray fields from a perpendicularly magnetized Co layer. This configuration promotes directional vortex entry and spatially selective pinning, yielding diode efficiencies that exceed all previously reported field‐free values in ferromagnet/superconductor multilayers. Temperature‐ and field‐dependent transport measurements, supported by micromagnetic simulations, reveal that the enhanced nonreciprocity results from three cooperative mechanisms: asymmetric vortex entry, localized magnetic pinning, and Lorentz‐force imbalance. These findings establish a CMOS‐compatible platform for high‐performance superconducting rectifiers, offering new opportunities for cryogenic spintronics and quantum electronics.

Article Details

Volume / Issue Vol. 38, Issue 7
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

J

Jiaxu Li

Z

Zijian Zhang

School of Physics

S

Shiqi Wang

Y

Yu He

Department of Cardiovascular Surgery, Med-X Institute, the First Affiliated Hospital of Xi’an Jiaotong University, Xi’an, Shaanxi, China.

H

Haochang Lyu

Beijing Superstring Academy of Memory Technology Beijing 100176 China

Q

Qiusha Wang

School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China

B

Bowen Dong

D

Daoqian Zhu

H

Hisakazu Matsuki

D

Dapeng Zhu

Integrated Circuit and Intelligent Instruments Innovation Center Qingdao Research Institute Beihang University Qingdao 266100 China

G

Guang Yang

W

Weisheng Zhao