Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
Abstract
The lattice locations and charge states of dopants in a crystal structure influence the optical, electronic, or magnetic properties of doped semiconductors. In this study, Fe lattice sites and charge states in In0.10Ga0.90N are investigated by emission Mössbauer spectroscopy following 57Mn+ implantation at ISOLDE, CERN. Room temperature measurements confirmed the presence of both Fe2+ and Fe3+ ions. The iron atoms with a 2+ charge state occupied the In/Ga site near a nitrogen vacancy. Paramagnetic Fe3+ signatures were evident on the outer regions of the spectra, akin to metal oxides, GaN, and AlN. Slow spin–lattice relaxation characteristics of high-spin ferric iron were observed, following T2 dependence. However, the relaxation rates in In0.10Ga0.90N are significantly slower than those in GaN. This is attributed to the weaker spin–lattice coupling, modified local symmetry, and crystal field splitting related to alloy disorder, softening the lattice. The ability to manipulate the dopant’s spin dynamics via alloying offers promising pathways for controlling spin coherence in InGaN-based spintronics and quantum devices.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (18)
O. Mpatani
Materials Physics Research Institute, School of Physics, University of the Witwatersrand 1 , Johannesburg 2050,
H. P. Gunnlaugsson
Science Institute, University of Iceland 2 , 107 Reykjavík,
D. Naidoo
Materials Physics Research Institute, School of Physics, University of the Witwatersrand 1 , Johannesburg 2050,
R. Adhikari
DAMTP, Centre for Mathematical Sciences, University of Cambridge 2 , Wilberforce Road, Cambridge CB3 0WA,
A. Tarazaga Martín-Luengo
Institute of Semiconductor and Solid State Physics, Johannes Kepler University 3 , A-4040 Linz,
K. Bharuth-Ram
Physics Department, Durban University of Technology 6 , Durban 4000,
R. Mantovan
7 CNR-IMM, Unit of Agrate Brianza, Via Olivetti 2, 20864, Agrate Brianza (MB), Italy
K. Johnston
EP Department, ISOLDE, CERN 8 , 1211 Geneva 23,
J. Schell
EP Department, ISOLDE, CERN 8 , 1211 Geneva 23,
B. Qi
Science Institute, University of Iceland 2 , 107 Reykjavík,
S. Ólafsson
Science Institute, University of Iceland 2 , 107 Reykjavík,
H. P. Gíslason
Science Institute, University of Iceland 2 , 107 Reykjavík,
G. Peters
Materials Physics Research Institute, School of Physics, University of the Witwatersrand 1 , Johannesburg 2050,
P. B. Krastev
Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences 10 , 1784 Sofia,
I. Unzueta
Fisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU) 11 , Europa Plaza 1, 20018 Donostia/San Sebastián,
D. V. Zyabkin
Materials Physics Research Institute, School of Physics, University of the Witwatersrand 1 , Johannesburg 2050,
A. Bonanni
Institute of Semiconductor and Solid State Physics, Johannes Kepler University 3 , A-4040 Linz,
H. Masenda
Materials Physics Research Institute, School of Physics, University of the Witwatersrand 1 , Johannesburg 2050,