Fast, Reconfigurable Domain‐Wall Logic in a Magnetic Insulator

Abstract

Abstract Conventional computing systems, based on silicon transistors, face challenges in meeting the growing demand for high computing efficiency in applications such as big data and artificial intelligence. Spin‐based logic devices, particularly those utilizing chiral domain walls, offer a promising alternative due to their potential for high‐performance and integration with high‐density memory. Here, heterostructures composed of magnetic insulator TbIG and ultrathin Co layers are created, enabling field‐free current‐driven domain‐wall motion at speeds exceeding 1.4 km s −1 . Based on the unique velocity phase diagram with respect to the in‐plane field and current density, the implementation of all 16 two‐input Boolean logic operations, including NAND, AND, XOR, and XNOR, is experimentally demonstrated by adjusting the current density and initial magnetization state. The results highlight the feasibility of multifunctional logic gates in spintronic systems and show the potential for energy‐efficient, high‐density in‐memory computing architectures.