Extending the exquisite control of molecular beam epitaxy to the other dimensions: Nanostructure engineering
Abstract
Molecular beam epitaxy (MBE) is a widely used tool for growing nanostructures and thin films, offering precise control and a near defect-free growth environment. While state-of-the-art MBE-grown materials remain primarily limited to small-scale research settings, the transition toward scalable production is critical for enabling real-world device applications. This Perspective highlights recent developments in nanostructures, which include quantum dots, van der Waals materials, and nanoparticle inclusions, and discusses techniques for integrating them into devices such as emitters and waveguides. It further explores emerging approaches for the fabrication of 3D nanostructures in predefined positions, incorporating semi-metals in semiconductors, and their subsequent large-scale integration into quantum devices.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (7)
Nazifa T. Arony
Department of Materials Science and Engineering, University of Delaware 1 , Newark, Delaware 19716,
Mrudul S. Parasnis
Department of Material Science and Engineering, University of Delaware 2 , Newark, Delaware 19716,
Lauren N. McCabe
Yale University Cleanroom 2 , New Haven, Connecticut 06511,
Paul Simmonds
Department of Electrical and Computer Engineering and Department of Physics & Astronomy, Tufts University 3 , Medford, Massachusetts 02155,
Vishnu Mambakkam
Department of Materials Science and Engineering, University of Delaware 1 , Newark, Delaware 19716,
Stephanie Law
Two-Dimensional Crystal Consortium, Materials Innovation Platform, Pennsylvania State University, University Park 4 , Pennsylvania 16802,
Joshua M. O. Zide
Department of Materials Science and Engineering