Exploring 400 Gbps/λ and beyond with AI-accelerated silicon photonic slow-light technology
Abstract
Abstract Silicon photonics is a promising platform for the extensive deployment of optical interconnections, with the feasibility of low-cost and large-scale production at the wafer level. However, the intrinsic efficiency-bandwidth trade-off and nonlinear distortions of pure silicon modulators result in the transmission limits, which raises concerns about the prospects of silicon photonics for ultrahigh-speed scenarios. Here, we propose an artificial intelligence (AI)-accelerated silicon photonic slow-light technology to explore 400 Gbps/λ and beyond transmission. By utilizing the artificial neural network, we achieve a data capacity of 3.2 Tbps based on an 8-channel wavelength-division-multiplexed silicon slow-light modulator chip with a thermal-insensitive structure, leading to an on-chip data-rate density of 1.6 Tb/s/mm2. The demonstration of single-lane 400 Gbps PAM-4 transmission reveals the great potential of standard silicon photonic platforms for next-generation optical interfaces. Our approach increases the transmission rate of silicon photonics significantly and is expected to construct a self-optimizing positive feedback loop with computing centers through AI technology.
Article Details
Authors (20)
Changhao Han
Qipeng Yang
Jun Qin
Yan Zhou
Zhao Zheng
Beijing Key Laboratory of Complex Solid State Batteries & Tsinghua Center for Green Chemical Engineering Electrification, Department of Chemical Engineering
Yunhao Zhang
Haoren Wang
Yu Sun
Junde Lu
Yimeng Wang
Department of Chemistry
Zhangfeng Ge
Yichen Wu
State Key Laboratory of Organometallic Chemistry and Shanghai-Hong Kong Joint Laboratory in Chemical Synthesis, Shanghai Institute of Organic Chemistry, CAS 345 Lingling Road, Shanghai 200032, P. R. China
Lei Wang
Zhixue He
Shaohua Yu
Weiwei Hu
Chao Peng
Haowen Shu
John E. Bowers
Xingjun Wang