Exceptional Rare‐Earth Half‐Heusler Thermoelectrics With Sublattice Softening

P Pu Miao L Lirong Hu (State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou China) S Shengnan Dai (Materials Genome Institute, State Key Laboratory of Advanced Refractories Shanghai University Shanghai China) J Jialin Ji (Materials Genome Institute, State Key Laboratory of Advanced Refractories Shanghai University Shanghai China) S Shen Han Z Zizheng Zang (State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou China) T Tianqi Deng (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) J Jiong Yang (Materials Genome Institute, State Key Laboratory of Advanced Refractories) C Claudia Felser T Tiejun Zhu (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) C Chenguang Fu (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering)

Abstract

ABSTRACT Half‐Heusler (HH) compounds are promising thermoelectric (TE) materials, but their intrinsically high lattice thermal conductivity ( κ L ) limits TE performance. Here, we report sublattice softening‐induced intrinsically low κ L and exceptional thermoelectricity in the previously underexplored rare‐earth (RE) containing HHs. Unlike conventional non‐RE HHs, the softened RE‐based lattice framework in RE‐HHs enables vigorous atom vibration within the 4c sublattice, strengthening lattice anharmonicity and phonon damping. This effect can be further amplified when heavier elements occupy the 4c sublattice, effectively suppressing both acoustic and optical phonon propagation and resulting in a pronounced reduction in κ L . Leveraging the low κ L , we identify four RE‐HHs—DyPtSb, Y 0.7 Lu 0.3 PtSb, Sc 0.6 Lu 0.4 PtSb, and Dy 0.7 Y 0.3 PtSb—with peak zT values exceeding 1.0. Notably, Dy 0.7 Y 0.3 PtSb achieves a maximum zT of 1.33 at 875 K. These findings underscore the promising potential of sublattice‐softened RE‐HHs as highly efficient thermoelectrics with broad compositional tunability.

Article Details

Volume / Issue Vol. 38, Issue 44
Published August 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

P

Pu Miao

L

Lirong Hu

State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou China

S

Shengnan Dai

Materials Genome Institute, State Key Laboratory of Advanced Refractories Shanghai University Shanghai China

J

Jialin Ji

Materials Genome Institute, State Key Laboratory of Advanced Refractories Shanghai University Shanghai China

S

Shen Han

Z

Zizheng Zang

State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou China

T

Tianqi Deng

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

J

Jiong Yang

Materials Genome Institute, State Key Laboratory of Advanced Refractories

C

Claudia Felser

T

Tiejun Zhu

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

C

Chenguang Fu

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering