Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory

J Jesse Huso (Klar Scientific 1 , 1615 NE Eastgate Blvd., Unit G, Ste. 3E, Pullman 99163, Washington,) B Benjamin Dutton (Washington State University 2 Institute of Materials Research. , Pullman 99164, Washington,) C Cassandra Remple (Washington State University 2 Institute of Materials Research. , Pullman 99164, Washington,) M Matthew D. McCluskey (School of Mechanical and Materials Engineering, Washington State University 1 , Pullman, Washington 99164,) J John S. McCloy (School of Mechanical and Materials Engineering, Washington State University 2 , Pullman, Washington 99164,) A Arkka Bhattacharyya (Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,) S Sriram Krishnamoorthy (Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,) S Steve Rebollo (Materials Department, University of California , Santa Barbara, California 93106,) J James S. Speck (Materials Department, University of California Santa Barbara 2 , Santa Barbara, California 93106,) J Joel B. Varley (Lawrence Livermore National Laboratory) L Lars F. Voss (Lawrence Livermore National Laboratory 4 , Livermore 94551, California,)

Abstract

Monoclinic gallium oxide (β-Ga2O3) single crystals have a Raman mode at ∼250 cm−1 that is strongly correlated with free-electron density. Prior work attributed this peak to an electronic excitation of a shallow donor impurity band. However, heavily n-type thin films grown by metalorganic chemical vapor deposition or molecular beam epitaxy do not have the peak. In the present work, an alternate model is proposed: the 250 cm−1 Raman peak arises from Ga clusters, defined as two or more Ga atoms that form Ga–Ga bonds. Raman mapping reveals variations in the frequency that are consistent with a distribution of cluster sizes. The intensity of the peak decreases as the temperature is raised, attributed to melting of the Ga clusters. First-principles calculations indicate that the 250 cm−1 mode is due to Ga–Ga bond-stretching vibrations. As the Fermi energy is raised, the formation of Ga–Ga dimers becomes energetically favorable, explaining the correlation between n-type conductivity and the appearance of the Raman peak.

Article Details

Volume / Issue Vol. 138, Issue 13
Published October 07, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (11)

J

Jesse Huso

Klar Scientific 1 , 1615 NE Eastgate Blvd., Unit G, Ste. 3E, Pullman 99163, Washington,

B

Benjamin Dutton

Washington State University 2 Institute of Materials Research. , Pullman 99164, Washington,

C

Cassandra Remple

Washington State University 2 Institute of Materials Research. , Pullman 99164, Washington,

M

Matthew D. McCluskey

School of Mechanical and Materials Engineering, Washington State University 1 , Pullman, Washington 99164,

J

John S. McCloy

School of Mechanical and Materials Engineering, Washington State University 2 , Pullman, Washington 99164,

A

Arkka Bhattacharyya

Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,

S

Sriram Krishnamoorthy

Materials Department, University of California Santa Barbara , Santa Barbara, California 93106,

S

Steve Rebollo

Materials Department, University of California , Santa Barbara, California 93106,

J

James S. Speck

Materials Department, University of California Santa Barbara 2 , Santa Barbara, California 93106,

J

Joel B. Varley

Lawrence Livermore National Laboratory

L

Lars F. Voss

Lawrence Livermore National Laboratory 4 , Livermore 94551, California,